RCJ200N20TL Discrete Semiconductor Products

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A RCJ200N20TL is a high power MOS field effect power transistor (MOSFET). It is a P-channel type device with an operating voltage of 200V and current rating of 20A. The transistor is a four-terminal device with a source, a gate, a drain, and a body.

The RCJ200N20TL can be used in a variety of applications, such as high power switching, high voltage switching, and power supply control. It is often used as a replacement for power transistors that have lower current ratings or higher voltages. It can also be used as an amplifier, motor control, and pulse control applications. The transistor has excellent features, such as fast switching, low on-resistance, and high current capability.

The working principle of a RCJ200N20TL is based on the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) theory. A MOSFET is a four-terminal device composed of a source, gate, drain, and body. A voltage applied to the gate terminal will cause a change in the current flow in the channels. The amount of current flowing is a function of the voltage applied to the gate and source. This current is referred to as the Channel Current. The Channel Current and the voltage applied across the drain and source terminals is used to determine the amount of power that can be supplied.

The RCJ200N20TL has a high power capability, which makes it ideal for high power switching applications. It can be used for the control of motor speed, amplification, and pulse width control. The device can also be used in power supply controller circuits where it can provide a stable and adjustable power output.

The RCJ200N20TL has been designed with a low output capacitance, which makes it ideal for high speed switching applications. The device also has excellent RDS (on) performance, which allows it to handle high current loads with low voltage drop. Its high VGS (gate to source voltage) ratings make it suitable for use in high voltage switching applications.

In conclusion, the RCJ200N20TL is an ideal choice for a variety of applications, such as in high power switching, high voltage switching, or pulse width modulation, due to its high current and voltage ratings and low input capacitance. It has excellent RDS(on) performance, which allows it to cope with high current loads with minimal voltage drop, and its high VGS(gate to source voltage) ratings make it suitable for use in various high voltage switching applications.

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