RCJ220N25TL Allicdata Electronics
Allicdata Part #:

RCJ220N25TLTR-ND

Manufacturer Part#:

RCJ220N25TL

Price: $ 0.98
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 250V 22A LPTS
More Detail: N-Channel 250V 22A (Tc) 1.56W (Ta), 40W (Tc) Surfa...
DataSheet: RCJ220N25TL datasheetRCJ220N25TL Datasheet/PDF
Quantity: 1000
1000 +: $ 0.88979
Stock 1000Can Ship Immediately
$ 0.98
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS (SC-83)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RCJ220N25TL is a high-performance enhancement-type metal-oxide-semiconductor field-effect transistor (MOSFET). It has a wide variety of applications such as power conversion, motor drives, power switching and so on. This article will discuss the application field and working principle of RCJ220N25TL.

Applications
RCJ220N25TL is usually used in power supplies, motor drives, PWM controllers, etc. It works well for AC/DC conversion and rectifier switch applications. It also has a low gate charge and a low threshold voltage, which makes it ideal for low-power control applications. In addition, it can also be used in power supply/control circuits and motor drive applications, as well as light load switching applications.

Working Principle
RCJ220N25TL uses an enhanced-mode MOSFET that is built on a silicon substrate to provide the high voltage and current rating required for the application. Its enhanced-mode MOSFET structure works as follows: electrons in the n-type substrate created by the application of external gate voltage move to the p-type substrate, creating a P-N junction. This junction then conducts current. With the increase in voltage, the current flow also increases until it reaches the rated current.

The MOSFET has two basic parts: the source and the drain. The source is the connection to the positive supply voltage while the gate is connected to the negative supply voltage. When the MOSFET is turned on, the gate voltage pushes down electrons on the n-type substrate, creating a conductive channel between the source and the drain. This is the principle by which a MOSFET is turned on. When the gate voltage is lowered, the electrons are pushed back to the substrate, opening up the channel and turning off the device.

RCJ220N25TL has a low gate charge, which reduces the power dissipation, allowing for maximum efficiency and energy saving in switching applications. It also has a low threshold voltage and the ability to easily switch on and off. This makes RCJ220N25TL suitable for a wide variety of power switching and control applications.

In conclusion, RCJ220N25TL is an ideal choice for power conversion, motor drives, and power switching applications due to its enhanced-mode MOSFET structure, low gate charge and low threshold voltage. With its low power dissipation and easy on/off switching, it is perfect for applications that require low power consumption and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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