RCX100N25 Allicdata Electronics
Allicdata Part #:

RCX100N25-ND

Manufacturer Part#:

RCX100N25

Price: $ 1.56
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 250V 10A TO-220FM
More Detail: N-Channel 250V 10A (Ta) 40W (Tc) Through Hole TO-2...
DataSheet: RCX100N25 datasheetRCX100N25 Datasheet/PDF
Quantity: 322
1 +: $ 1.41750
10 +: $ 1.27827
100 +: $ 1.02696
500 +: $ 0.79876
1000 +: $ 0.66183
Stock 322Can Ship Immediately
$ 1.56
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: --
Series: --
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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RCX100N25 is a type of single-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is commonly used to switch and regulate the power supply, providing power control, electrical protection, and current limiting.

The modern technology of MOSFETs provides highly efficient power conversion, enabling high power applications in a limited space. The RCX100N25 features superior ESD protection and low on-resistance. These features make it suitable for gate drivers, DC/DC converters, Motor drivers, and other driving and control applications requiring high speed and high current flow.

For practical applications, it is important to understand how MOSFETs function. As a field-effect transistor, a MOSFET is structured such that it consists of two terminals, the source and the drain, and a gate, which is situated between the source and the drain. By applying a voltage potential between the gate and the source, the flow of current between the source and the drain is regulated.

In the simplest case, the RCX100N25 is normally "off", i.e., the drain-source is not conducting any current. When a positive voltage is applied to the gate, the device is switched "on", allowing the current to flow through the drain-source. When the gate is de-activated, the MOSFET is again "off". Thus, the on/off switching action of the MOSFET is regulated by the voltage applied at the gate.

The unique structure and properties of the RCX100N25 give it a wide range of application fields. For example, it can be used for power electronics applications, such as voltage and current regulators, switching converters, AC/DC and DC/DC rectifiers, power supplies and variable frequency drives. It is also widely used in industrial motion control systems, such as stepper motor controllers, servo motors and robotic arms.

The RCX100N25 has a number of advantages that make it an ideal choice for the above applications. Firstly, it has a very low value of on-resistance (RDSon), typically ranging from 0.7 to 6 Ohms. This allows it to control large currents very efficiently. Furthermore, it has very low gate-source/drain-source capacitance (Cgs/Cds), making it suitable for high-precision control, where fast switching is required. Lastly, it features an ESD protection rating of up to 8kV, which makes it suitable for use in harsh electrical environments.

In conclusion, the RCX100N25 is a single-channel MOSFET which is most often used to switch and regulate the power supply, providing power control, electrical protection, and current limiting. Its low on-resistance, low capacitance and high ESD protection rating make it suitable for a wide range of power electronics, industrial motion control, and other applications.

The specific data is subject to PDF, and the above content is for reference

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