Allicdata Part #: | RCX120N20-ND |
Manufacturer Part#: |
RCX120N20 |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 200V 12A TO-220FM |
More Detail: | N-Channel 200V 12A (Tc) 2.23W (Ta), 40W (Tc) Throu... |
DataSheet: | RCX120N20 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 0.65930 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 325 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5.25V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.23W (Ta), 40W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FM |
Package / Case: | TO-220-3 Full Pack |
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The RCX120N20 is a type of single field effect transistor (FET). It is a power MOSFET with a voltage rating of 200V and provides a high-efficiency solution to power-switching applications. Its on-rectifier switch characteristic and fast switching speeds make it ideal for applications with high frequency switching requirements.
Compact in size and optimized for power loss, the RCX120N20 offers improved performance compared to other MOSFETs. Furthermore, its insulated gate construction eliminates the use of external gate-driving circuits, resulting in smaller system designs. As such, this type of transistor is highly suitable for converters, automotive power systems, and general high-frequency switching applications, providing superior switching performance and power conversion efficiency.
The working principle of a field-effect transistor (FET) is based on the basic concept of capacitive current flux. A small electric field, created by voltages applied to two insulation channels (the source and drain regions), affects the behavior of the semiconductor material in between. This effect is known as the "FET Effect".
In a FET, current flows between the source and drain regions, depending on the applied voltage. The magnitude of this current is defined by the voltage of the gate region. If the gate voltage is increased, more current can flow between the source and drain. Moreover, the gate voltage can control the polarity of the current flow, allowing it to be either in a positive or negative direction. The FET performs as a voltage-controlled switch and can be used in various types of circuit applications.
The RCX120N20 FET is structured in an insulated gate construction, without the need for an external gate driver component. It features a low on-state resistance providings a high current in both the positive and negative directions. This makes the transistor ideal for high-frequency switching applications, such as power converters, power inverters, and motor control. The low gate drive helps minimize losses and ensure a high-efficiency power conversion.
In addition, its superior switching speed ensures fast control. The FET can be rapidly switched on or off, which makes it suitable for applications that require fast response times, such as switching regulators. Furthermore, the RCX120N20 transistor can be used in general purpose circuits with rectifiers and capacitive builds. It is useful in protecting circuits from overcurrent and limiting voltage, as well as helping to maintain low-power output.
Overall, the RCX120N20 single FET is a highly efficient and reliable transistor. It is optimized for power loss and is ideal for various types of power-switching and high-frequency switching applications. In addition, its superior switching speed and insulated gate construction make it suitable for a wide range of circuit designs.
The specific data is subject to PDF, and the above content is for reference
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