RCX200N20 Allicdata Electronics
Allicdata Part #:

RCX200N20-ND

Manufacturer Part#:

RCX200N20

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 200V 20A TO220
More Detail: N-Channel 200V 20A (Tc) 2.23W (Ta), 40W (Tc) Throu...
DataSheet: RCX200N20 datasheetRCX200N20 Datasheet/PDF
Quantity: 215
1 +: $ 0.95130
10 +: $ 0.84420
100 +: $ 0.66742
500 +: $ 0.51758
1000 +: $ 0.40862
Stock 215Can Ship Immediately
$ 1.04
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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IntroductionThe RCX200N20 is a type of Field Effect Transistor (FET). It is an N-Channel Enhancement Mode MOSFET, with a voltage rating of 200v. This transistor is used in a variety of applications, to switch and control current and voltage distribution circuits. The RCX200N20 works as an electronic switch, as it can open and close its conducting channel, depending on the voltage applied across its gate and source. In this paper, we will discuss the RCX200N20’s application field and working principle. Electrical Characteristics of the RCX200N20Before looking at the RCX200N20’s application field and working principle, it is important to understand the electrical characteristics of this transistor. The RCX200N20 has a maximum source-drain voltage of 200v, a continuous drain current of 20A and a maximum continuous on-state drain current of 30A. It has a drain-source on-resistance value of 5.5Ω, a gate threshold voltage of 0.8v and a gate-source leakage current of 1µA. It is also equipped with an integrated temperature protection feature, which enables it to shut itself off whenever the temperature of the device reaches 150°C. Application Field of the RCX200N20The RCX200N20 is used in switching and controlling circuits. It is frequently used in high-power DC-DC converters, as it can be used to control the flow of current and voltage in such circuits. It can also be used in motor control applications, as its high current-carrying capacity and low on-resistance make it ideal for controlling the speed and torque of a motor. It is also suitable for lighting applications, as its temperature protection feature prevents it from getting damaged due to excessive temperature. Working Principle of the RCX200N20The RCX200N20 works as an electronic switch. It consists of a conducting channel connecting its source and drain terminals, and a gate terminal which can be used to control the conducting channel. When a voltage is applied between the gate and source terminals, this voltage pushes electrons into the conducting channel, causing the channel to become more conductive. Thus, when the gate-source voltage exceeds the gate threshold voltage of the transistor, which is 0.8v for the RCX200N20, the conducting channel is opened and current can flow between the source and drain terminals. When the gate-source is less than the gate threshold voltage, the conducting channel is closed, and current cannot flow across it.ConclusionTo conclude, the RCX200N20 is a type of N-Channel Enhancement Mode MOSFET which is used frequently in high-power switching and control circuits. It has a maximum source-drain voltage of 200v, a maximum continuous drain current of 20A, a drain-source on-resistance value of 5.5Ω, a gate threshold voltage of 0.8v and an integrated temperature protection feature. It works as an electronic switch, as it can open and close its conducting channel, depending on the voltage applied across its gate and source.

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