| Allicdata Part #: | RCX220N25-ND |
| Manufacturer Part#: |
RCX220N25 |
| Price: | $ 1.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 250V 22A TO220 |
| More Detail: | N-Channel 250V 22A (Tc) 2.23W (Ta), 40W (Tc) Throu... |
| DataSheet: |  RCX220N25 Datasheet/PDF |
| Quantity: | 273 |
| 1 +: | $ 1.41750 |
| 10 +: | $ 1.28205 |
| 100 +: | $ 1.03024 |
| 500 +: | $ 0.80130 |
| 1000 +: | $ 0.66393 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FM |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2.23W (Ta), 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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The RCX220N25 is a power MOSFET designed for use in various electronic applications. It belongs to the SiH family of FETs (Field Effect Transistors), and utilizes the MOSFET structure to provide the necessary electrical properties such as high voltage breakdown characteristics and low on-resistance. It is an excellent choice for applications that require switching of loads at high frequencies and current levels, including power sources, motor drives, and digital control systems.
The device consists of a p-channel MOSFET as the main component, in combination with an additional drain-source resistor which provides a controlled current to the power FET. This resistor limits the current being applied to the MOSFET and maintains the drain-source voltage at a certain threshold level. In addition, the device has an over-current protection feature that helps prevent it from being damaged by excessive current.
Applications for the RCX220N25 include power supplies, motor drives, and digital control systems. It is suitable for switching applications demanding high frequency, low on-resistance, and high voltage breakdown characteristics. Due to its low quiescent current, it is also suitable for applications which require low power consumption.
The working principle of the RCX220N25 is based on the flow of electrons or holes through the MOSFET when voltage is applied to the gate. When a voltage is applied to the gate, a depletion layer is formed around the gate of the MOSFET. This depletion layer prevents any current from flowing through the device. However, if a voltage is applied to the source terminal, electrons or holes move through the MOSFET towards the gate. This results in a current flowing through the device. The amount of current that can flow through the device depends on the voltage applied to the gate. By manipulating the voltage applied to the gate, the amount of current flowing through the device can be controlled.
The RCX220N25 is a robust and reliable power MOSFET designed for various electronic applications. Its low on-resistance and high frequency performance make it ideal for switching applications, and its over-current protection feature ensures safe operation in all conditions. It is also suitable for applications which demand low power consumption, making it a great choice for any electronic application.
The specific data is subject to PDF, and the above content is for reference
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