| Allicdata Part #: | RD3P130SPTL1TR-ND |
| Manufacturer Part#: |
RD3P130SPTL1 |
| Price: | $ 0.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | PCH -100V -13A POWER MOSFET |
| More Detail: | P-Channel 100V 13A (Ta) 20W (Tc) Surface Mount TO-... |
| DataSheet: |  RD3P130SPTL1 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.51671 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 6.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The RD3P130SPTL1 is a single-drain MOSFET that helps manufacturers achieve superior electrical performance. It is designed primarily to be used in power supply, telecommunications and computer networks, as well as many industrial applications.
The MOSFET features three source terminals and one drain terminal, as well as a central gate terminal. The two outer source terminals are used to connect to the source voltage, with the third source terminal connecting to the gate voltage. The drain terminal is connected to the load. This basic configuration is known as a three-terminal MOSFET.
The MOSFET uses a variety of modern cutting-edge technologies in order to provide superior electrical performance. These include advanced carrier mobility, low-resistance products, low-THD (total harmonic distortion) components, and low-ESD (electrostatic discharge) components.
The primary working principle behind a MOSFET is that it is a current-controlled device. The current flowing through the device is controlled by the gate terminal. A small current applied to the gate terminal can cause a large current to flow through the device. This allows the user to precisely control the amount of current that is flowing through the device.
The RD3P130SPTL1 features a maximum peak drain current of 30A, a breakdown voltage of 0.8V, and an on resistance of 0.672 Ohm. It has an isolation voltage of 2500V, a maximum junction temperature of 150°C, and a gate protection circuit. It also has a lead-free and halogen-free packaging.
The RD3P130SPTL1, being a single-drain MOSFET, is suitable for a variety of applications. In power supplies and telecommunications, it can be used for switch mode power supplies, DC/DC converters, and high-frequency switching. It can also be used for switching applications in computers, radio works and automotive applications. In industrial applications, it can be used for motor control and PFC (power factor correction) circuits.
The RD3P130SPTL1 is a 3-terminal MOSFET, meaning it uses three terminals to control the current flow. The first two terminals are connected to the source voltage and the third terminal is connected to the gate voltage. The drain terminal is connected to the load, and when a small current is applied to the gate terminal, a large current is able to flow through the MOSFET.
The RD3P130SPTL1 is designed to provide superior electrical performance, making it suitable for a variety of applications. Its cutting-edge technologies and precise control over current flow make it an ideal choice for power supplies, telecommunications, computer networks, and many industrial applications.
The specific data is subject to PDF, and the above content is for reference
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