RD3P175SNTL1 Discrete Semiconductor Products |
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Allicdata Part #: | RD3P175SNTL1TR-ND |
Manufacturer Part#: |
RD3P175SNTL1 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 100V 17.5A POWER MOSFET |
More Detail: | N-Channel 100V 17.5A (Ta) 20W (Tc) Surface Mount T... |
DataSheet: | RD3P175SNTL1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.43138 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 8.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17.5A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Field effect transistors (FETs) are electronic devices that are used as a primary component in many electronic systems. RD3P175SNTL1 is a single-gate N-channel FET that is commonly used in radio frequency (RF) applications. This FET is commonly used in low-noise amplification, switching, and other applications where high gain, low noise, and low cost are desired.
The RD3P175SNTL1 is a unipolar device, meaning that it only requires an electrical connection on one side in order to operate, making it more easily incorporated into a variety of designs. This FET has a maximum voltage rating of 175V and a continuous drain current rating of 3A. This allows it to be used in a variety of high power applications, such as in switching power supplies and audio power amplifiers.
The working principle behind the RD3P175SNTL1 is that of a field effect transistor. This type of transistor uses electric fields to control the flow of current between source and drain. The flow of current is dependent on the gate voltage, which is applied between the gate and source of the FET. A positive gate-to-source voltage will cause the FET to be in an “on” state, while a negative gate-to-source voltage will cause it to be in an “off” state. The gate voltage can also be used to control the amount of current that flows between the source and drain.
The RD3P175SNTL1 is a common choice for radio frequency applications because it has a low gate input capacitance, a low noise figure, and a fast switching speed. It can be used as an amplifier and oscillator, as a switch in consumer electronics, and in other low noise applications. One example of its usage is as a switching power supply in consumer electronics, such as a laptop or mobile phone.
The RD3P175SNTL1 is a versatile device that can be used in a variety of applications. It is commonly used in low-noise amplification, switching, and other applications where high gain, low noise, and low cost are desired. This FET can be used in switching power supplies and audio power amplifiers, and it is a common choice for radio frequency applications due to its low gate input capacitance, low noise figure, and fast switching speed. The RD3P175SNTL1 is a useful device for many applications.
The specific data is subject to PDF, and the above content is for reference
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