RDD023N50TL Discrete Semiconductor Products |
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Allicdata Part #: | RDD023N50TLTR-ND |
Manufacturer Part#: |
RDD023N50TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 500V 2A CPT3 |
More Detail: | N-Channel 500V 2A (Tc) 20W (Tc) Surface Mount CPT3 |
DataSheet: | RDD023N50TL Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 151pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.4 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Description
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The RDD023N50TL is a semiconductor device designed to function as a high-performance and reliable power MOSFET. It is available for a wide range of applications, from room temperature applications to high temperature applications. This MOSFET is used in a variety of field applications, such as DC/DC converters, power conditioning, motor drives, and more. The RDD023N50TL also boasts class leading RDs(on), making it an ideal choice for power switching applications.
The RDD023N50TL is a type of transistor known as a Field-Effect Transistor (FET). FETs are unipolar transistors and are used in a wide range of applications, such as amplifiers and switches. The RDD023N50TL is a type of FET known as a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). The MOSFET has two main types: P-type, or N-type. The RDD023N50TL is an N-type MOSFET.
N-type MOSFETs are constructed from three layers of doped silicon. The first layer is a substrate, the second is an insulator, and the third is a conducting channel. When a voltage is applied to the gate of the MOSFET, a negative charge builds up in the channel. This attracts positive charges to the source and drain, effectively creating an electrical field that allows current to pass through, creating a MOSFET switch.
The RDD023N50TL is a single-channel MOSFET, meaning that it has only one channel through which current can flow. This makes it ideal for applications that require a fast switching time, such as DC/DC converters and motor drives. Additionally, the RDD023N50TL has a very low RDs(on), and is capable of handling up to 50A of current, making it a powerful choice for power switching applications.
In conclusion, the RDD023N50TL is an ideal choice for a wide variety of applications. From room temperature to high temperature applications, the RDD023N50TL is capable of switching high currents with ease. Additionally, its low RDs(on) and fast switching time make it a powerful choice for applications such as DC/DC converters, power conditioning, and motor drives.
The RDD023N50TL is a type of transistor known as a Field-Effect Transistor (FET). FETs are unipolar transistors and are used in a wide range of applications, such as amplifiers and switches. The RDD023N50TL is a type of FET known as a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). The MOSFET has two main types: P-type, or N-type. The RDD023N50TL is an N-type MOSFET.
N-type MOSFETs are constructed from three layers of doped silicon. The first layer is a substrate, the second is an insulator, and the third is a conducting channel. When a voltage is applied to the gate of the MOSFET, a negative charge builds up in the channel. This attracts positive charges to the source and drain, effectively creating an electrical field that allows current to pass through, creating a MOSFET switch.
The RDD023N50TL is a single-channel MOSFET, meaning that it has only one channel through which current can flow. This makes it ideal for applications that require a fast switching time, such as DC/DC converters and motor drives. Additionally, the RDD023N50TL has a very low RDs(on), and is capable of handling up to 50A of current, making it a powerful choice for power switching applications.
In conclusion, the RDD023N50TL is an ideal choice for a wide variety of applications. From room temperature to high temperature applications, the RDD023N50TL is capable of switching high currents with ease. Additionally, its low RDs(on) and fast switching time make it a powerful choice for applications such as DC/DC converters, power conditioning, and motor drives.
The specific data is subject to PDF, and the above content is for reference
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