
RE1C001ZPTL Discrete Semiconductor Products |
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Allicdata Part #: | RE1C001ZPTLTR-ND |
Manufacturer Part#: |
RE1C001ZPTL |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 0.1A EMT3 |
More Detail: | P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.04000 |
10 +: | $ 0.03880 |
100 +: | $ 0.03800 |
1000 +: | $ 0.03720 |
10000 +: | $ 0.03600 |
Vgs(th) (Max) @ Id: | 1V @ 100µA |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 10V |
Vgs (Max): | ±10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.8 Ohm @ 100mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RE1C001ZPTL is a voltage type metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Renesas. This MOSFET is a single FET, meaning that only one type of transistor (specifically, an N-channel enhancement-mode JFET) is housed in the device.
The RE1C001ZPTL is designed for use in a variety of different applications. It is best suited for automotive systems, such as door locks, brake pedal switches, and other signs that require a reliable, rugged, and high speed switching. This MOSFET also has an extended operating temperature range so it can be used in a wide variety of temperature and environmental conditions. This makes it an ideal choice for applications in cars, trucks, motorcycles, and other vehicles that travel in extreme environmental conditions.
The RE1C001ZPTL has a low on-state resistance, meaning it is very efficient in terms of electricity used. Its high switching speeds make it ideal for applications such as motor control, power supply circuitry, and audio amplifiers. In addition, it has a low power dissipation, making it well-suited for automated control applications.
The RE1C001ZPTL is built using advanced technology, allowing it to perform well in challenging conditions. Its power breakdown voltage is rated at 12V/30V, with a maximum on-state current of 7.5A. The maximum gate-source voltage is rated at 20V, and the gate-drain leakage current is rated at 10uA. The device also features high junction temperature of 175°C.
The working principle of a MOSFET is fairly simple. A drain-source channel is formed between the source and drain electrodes, and this channel is then modulated by a gate-to-source voltage. When the gate-to-source voltage is more positive than the threshold voltage, electrons in the channel become more mobile, and the channel is then said to be in an ON state. When the gate-to-source voltage is less than the threshold voltage, the electron mobility is reduced, and the channel is said to be OFF.
The RE1C001ZPTL is a very reliable and efficient MOSFET, and is well-suited to a variety of applications. Its high speeds, low power dissipation, and extended operating temperature range make it ideal for automotive, motor control, and audio amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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