RE1C002UNTCL Discrete Semiconductor Products |
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Allicdata Part #: | RE1C002UNTCLTR-ND |
Manufacturer Part#: |
RE1C002UNTCL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 20V 0.2A EMT3 |
More Detail: | N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RE1C002UNTCL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 10V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 100mA, 2.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 2.5V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RE1C002UNTCL Application Field and Working Principle
RE1C002UNTCL is a Unipolar N-Channel Junction Field-Effect Transistor (UNJFET), a new type of transistor developed by ROHM Co. Ltd. It is designed to serve as an efficient and cost-effective driver for high power LED applications. The device is ideal for not just LED but other switching applications such as motor control, load control and motor control, for example.
The RE1C002UNTCL consists of two main components, the N-Channel Dual Junction Field-Effect Transistor (NJFET) and the Bipolar Junction Transistor (BJT). These two components are connected together in such a way that the BJT acts as a driver for the NJFET. The BJT is the primary driver, while the NJFET is a secondary driver. By using both components, the NJFET is capable of achieving higher switching speeds than traditional single FETs.
The NJFET has a higher gain than its BJT counterpart, and as a result, it can be used to drive more current with fewer input voltages. It also has a higher breakdown voltage than BJTs, meaning it can be used to switch larger loads with fewer volts. The NJFET\'s output voltage is also adjustable, allowing it to be used in a wide variety of applications.
The operation of the RE1C002UNTCL is based on the principle of threshold voltage. A voltage is applied to the gate of the NJFET, and this voltage will be compared to the threshold voltage of the device. If the voltage applied is below the threshold voltage, the transistor will stay in the cutoff region and no current will flow through it. If the voltage is above the threshold voltage, the transistor will enter the saturation region and current will flow through it.
The threshold voltage of the RE1C002UNTCL is extremely low compared to other FETs, and the device has a low input capacitance, which makes it extremely efficient. The device has an amplitude control of 0.6 V, making it suitable for switching high power LEDs. The device also has a high output current capability and a low static power dissipation.
In conclusion, the RE1C002UNTCL is a highly efficient and economical driver for high power LED applications. It is ideal for applications such as motor control, load control and motor control. The device is capable of high switching speeds and low input capacitance, resulting in an efficient performance. The device has a low threshold voltage, high output current capability and low static power dissipation, making it a good choice for LED applications.
The specific data is subject to PDF, and the above content is for reference
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