RF4C050APTR Discrete Semiconductor Products |
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Allicdata Part #: | RF4C050APTR-ND |
Manufacturer Part#: |
RF4C050APTR |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 10A 8HUML |
More Detail: | P-Channel 20V 10A (Ta) 2W (Ta) Surface Mount HUML2... |
DataSheet: | RF4C050APTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.13813 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | 8-PowerUDFN |
Supplier Device Package: | HUML2020L8 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 10V |
Vgs (Max): | -8V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RF4C050APTR is a single Mosfet that is used in a variety of applications, most notably in switching and amplifier applications. It is a surface-mount device that is the most commonly used in high-performance circuits, due to its excellent performance characteristics. This article will explain the application field of the RF4C050APTR and its working principle.
Application Field
The RF4C050APTR is typically used in applications such as audio amplifiers and instrumentation, as well as many other types of switching applications. Audio amplifiers are typically powered by alternating current, which is converted to direct current via an amplifier that includes a transistors-based output stage, thus making the RF4C050APTR an ideal choice for such applications. Furthermore, it’s commonly used in instrumentation devices such as oscilloscopes, due to its robust performance and reliability. In addition, the RF4C050APTR is a great choice for controlling other devices, such as motors, pumps and valves, where high frequencies are required. Lastly, the RF4C050APTR can be used for switching applications, where low noise and high current capacity are key performance factors.
Working Principle
The RF4C050APTR utilizes a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) technology, which is capable of providing an efficient current conduction with an incredibly low power dissipation. This type of transistor is well-suited for use in audio, where maximum power efficiency is required. In operation, an RF4C050APTR uses voltage to control the current being conducted across it. This feature is known as the “Voltage Controlled Current Transfer”. It is also capable of implementing various techniques that can be used to dampen and reduce inductance, thus minimizing the negative effects of ringing and time-delay distortion.
The RF4C050APTR is capable of dissipating power in the range of one to ninety milliwatts, while consuming very low gate power. It also has a very small size while still providing impressive performance. This small form factor is further complemented by its rugged construction, making it ideal for installation in small systems. Furthermore, the RF4C050APTR has a very high input impedance, which allows it to accurately control the flow of current across it, without distorting the signal.
Conclusion
The RF4C050APTR is a single Mosfet that is commonly used in a variety of applications, including audio amplifiers and instrumentation. This is due to its high performance characteristics and low power dissipation. It utilizes a MOSFET technology in order to provide efficient current conduction with minimal power loss. It is capable of dissipating power in the range of one to ninety milliwatts, while providing an impressive performance. Furthermore, its small size and rugged construction make it an excellent choice for installation in small systems. The RF4C050APTR is a great choice for applications that require high performance and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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