| Allicdata Part #: | RFD8P05-ND |
| Manufacturer Part#: |
RFD8P05 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 50V 8A I-PAK |
| More Detail: | P-Channel 50V 8A (Tc) 48W (Tc) Through Hole TO-251... |
| DataSheet: |  RFD8P05 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 50V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 20V |
| Vgs (Max): | ±20V |
| FET Feature: | -- |
| Power Dissipation (Max): | 48W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-251AA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The RFD8P05MOSFET is a 25V, N-Channel depletion mode MOSFET manufactured by Fairchild Semiconductor. It features an on-resistance of 8mΩ with low gate charge of 2nC. The device is designed for portable applications, such as cell phones and PDAs that require low on-resistance, low power dissipation, and minimal area. This MOSFET also comes in a convenient 3mm x 3mm package.
The RFD8P05 is a depletion mode MOSFET, which means that it\'s normally on and the gate bias is used to turn the device off. The gate bias is the potential difference applied to the gate, relative to the source terminal. When the gate voltage is close to the source voltage, the device is open, allowing an easy flow of current. When the gate voltage is sufficiently negative, the channel is pinched off, preventing current flow.
The RFD8P05 is an ideal MOSFET for low-power applications. Its 25V drain-to-source voltage rating makes it suitable for most consumer and communication devices. Its low on-resistance of 8mΩ provides a low voltage drop and prevents excessive power dissipation. Its low gate charge of 2nC prevents excessive gate current and thus reduces total system power consumption. Its 3mm x 3mm package increases the device\'s efficiency by allowing it to be placed in smaller devices.
The RFD8P05 is a versatile device that is suitable for many applications. It can be used to create a high-side switch for a 12V system, as well as a low-side switch for a 5V system. It can also be used to drive a high-current load (up to 8A) in low-power applications. It is also suitable for the switching and control of LEDs, motors, and other loads.
In summary, the RFD8P05 is a 25V N-Channel depletion mode MOSFET that is suitable for portable applications such as cell phones and PDAs. It features low on-resistance, low gate charge, and a 3mm x 3mm package. It is an ideal device for low-power applications, such as driving high-current loads, LEDs, and motors.
The specific data is subject to PDF, and the above content is for reference
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