Allicdata Part #: | RFD8P05SM-ND |
Manufacturer Part#: |
RFD8P05SM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 8A TO-252AA |
More Detail: | P-Channel 50V 8A (Tc) Surface Mount TO-252AA |
DataSheet: | RFD8P05SM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 20V |
FET Feature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The RFD8P05SM is a part of the radio-frequency discrete semiconductor family of transistors from Nexperia. This particular transistor is a single-phase, N-channel, Enhancement Mode, Power MOSFET. It is designed for high-frequency switching applications and is best suited for use when low board space is of importance.
Application Field of RFD8P05SM
As it is an N-channel Enhancement Mode MOSFET, the RFD8P05SM is ideal for use in broadband power amplification of both linear and non-linear signals and voltage amplification applications. It is especially suited for several applications common in the audio, automotive, industrial, mobile communication, satellite and test & measurement industries. These applications include RF switching in communications equipment such as base station and other transistorized equipment, automotive ignition modules, key transponders, RF welding, RF receivers, RFID tags and readers, satellite TV amplifiers, car alarms and even more.
Working Principle of RFD8P05SM
This transistor is an N-channel MOSFET and it works by having an input voltage applied to its gate terminal. This creates an electrical field that affects the conductivity of the transistor such that a larger input voltage will cause the transistor to conduct more current between its drain and source pins. The drain and source terminals of the transistor can also be used to inject a current into the circuit, which will further increase the voltage of the gates.
The RFD8P05SM is rated at a gate-drain breakdown voltage of 75V and can handle a source-drain current up to 8A. The device is relatively low-power, which allows it to draw less current when driving small loads. Additionally, the device is rated for a maximum power dissipation of 1.2 watts in order to help preserve the integrity of the circuit.
Conclusion
The RFD8P05SM is a single-phase N-channel, Enhancement Mode Power MOSFET from Nexperia. Its small size and low power consumption make it ideal for applications common Wireless Communications, Automotive, Industrial, Mobile, Satellite and Test & Measurement Equipment. Its gate-drain breakdown voltage of 75V and source-drain current rating of 8A allow it to handle high frequencies and relatively large input currents without fail. Finally, its maximum power dissipation rating of 1.2W helps to protect the circuit from overloading.
The specific data is subject to PDF, and the above content is for reference
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