RFP40N10

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	40 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	300nC @ 20V
Vgs (Max):	±20V
FET Feature:	--
Power Dissipation (Max):	160W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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Introduction
The RFP40N10 is a type of field-effect transistor (FET) used in applications where switching speed, load drive capability and low on-resistance are essential. The RFP40N10 is a N-Channel enhancement-mode, and designed to minimize the on-resistance of the MOSFET die while maximizing the power dissipation capability. It is available in a variety of packages, including the TO-18, TO-252 and theD 2PAK.Application Field of RFP40N10
RFP40N10 is designed to be used in hot-swap protection, motor control, lamp dimming and liquid crystal display (LCD) backlighting applications. It is suitable for commutation in both DC and AC circuits and in the presence of transient voltages. It is ideal for use in applications where switching occur between 10kHz and 100 kHz, and the low gate charge and internal capacitance of this FET make it well-suited for use in high-frequency applications such as switching power supplies. The low resistance of the RFP40N10 also makes it ideal for use in battery-driven applications, such as laptops and cell phones where power dissipation is critical.Working Principle of RFP40N10
RFP40N10 is an N-Channel enhancement MOSFET, which means that the gate of the FET is used to control when a current is passed through the FET. The RFP40N10 has an enhancement-mode in which its gate is kept at a slightly positive voltage so that no current flows from the source to the drain. When the gate voltage is increased, a current will start to flow from the source to the drain. The on-resistance of the RFP40N10 is low, so it can effectively control the amount of current that is allowed to pass through it.When the gate voltage is lowered, it disrupts the depletion region and weakens the electric field. This causes the current to stop flowing and the FET to turn off. The low gate-charge also makes the RFP40N10 able to rapidly switch between the two states. This makes it ideal for use in high-frequency switching applications.Conclusion
The RFP40N10 is a versatile transistor used in a variety of applications, such as switching power supplies, hot-swap protection, motor control, lamp dimming and LCD backlighting. Its low on-resistance and low gate-charge make it ideal for use in high-frequency applications. Thanks to its robust design and wide availability, the RFP40N10 is a popular choice for many electronics applications.

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