| Allicdata Part #: | RFP45N06-ND |
| Manufacturer Part#: |
RFP45N06 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 45A TO-220AB |
| More Detail: | N-Channel 60V 45A (Tc) 131W (Tc) Through Hole TO-2... |
| DataSheet: |  RFP45N06 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 28 mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 20V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 131W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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The RFP45N06 is a power MOSFET transistor that belongs to the single FETs category. Developed by Fairchild Semiconductor, the RFP45N06 comes with a high saturation voltage, which makes it suitable for a wide range of applications. It also comes with an advanced technology process that makes it reliable and power efficient.
The RFP45N06 transistor is a highly popular choice among power semiconductor experts due to its impressive power efficiency and performance. Its ability to handle high voltage and current enables it to be used in various applications such as power supplies, frequency converters, consumer electronics, and digital power systems. Additionally, its open-drain feature and reverse body protection, makes it the ideal choice for high voltage applications in a variety of industries, such as robotics, medical, automotive, and industrial automation.
The basic RFP45N06 working principle involves the operation of two 2 sets of transistors. The drain and source pins, which are connected to the power supply, are protected from overcurrent by the first set of transistors. The second set of transistors is connected to the gate, which is the control element of the MOSFET. As current is applied to the gate, it gate voltage decreases, allowing current in the drain-source junction to increase. This enables the MOSFET to start the switching process.
The RFP45N06 has a number of features that make it an excellent choice in various applications and circuits. Its low gate capacitance ensures optimal performance, while its low ON-resistance enables it to switch efficiently and accurately. Additionally, it has a good drain-source ON-resistance versus gate voltage (RDSON-VGS) curve. This ensures that the switching times are very high and switching loss is kept to a minimum. Furthermore, its high power handling ability makes it ideal for high-power applications.
The RFP45N06 is a versatile MOSFET that can be used in various innovative applications. Due to its low ON-RES, high power handling ability, and a variety of other features, this transistor is frequently used in various high power applications, such as automotive electronics, avionics, robotics, and home appliances. Additionally, it is can also be used to design innovative circuits, such as multi-phase converters, high-density inverters, and DC-DC converters.
Overall, the RFP45N06 is an excellent choice for a wide range of applications. Its impressive power efficiency, as well as its wide range of features, make it the ideal choice for numerous circuit designs and applications. Its reliability, performance and power efficiency are what make it an ideal choice for a large range of applications, across many industries.
The specific data is subject to PDF, and the above content is for reference
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