RN1505(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Discontinued at Digi-Key
Transistor Type:	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SC-74A, SOT-753
Supplier Device Package:	SMV

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The RN1505(TE85L,F) is a transistor array and pre-biased type. It is used for a wide range of applications, including signal amplification and switching, as well as for voltage regulation, signal conditioning, and signal detection in industrial and consumer electronic applications. This device offers enhanced performance characteristics including high power efficiency and fast switching speed.The RN1505(TE85L,F) is a multi-transistor array consisting of four transistors, each with its own base, collector and emitter. The external leads consist of five leads, two for the base of each transistor, two for the collectors, and one for the emitter. This arrangement allows for flexible performance and enables easy assembly.The principle of operation of the RN1505(TE85L,F) is based on the behavior of the charge carriers within the transistor. When a positive potential is applied to the base of the transistor, the electric current between the collector and emitter will be generated, in proportion with the current at the base side. The positive potential at the base will cause the electrons within the semiconductor material to start flowing towards the emitter. The emitted electron flux, as well as the number of holes generated within the collector, will be proportional to the base voltage.The RN1505(TE85L,F) array is generally pre-biased, meaning that the supply voltage to the base is pre-configured to a specific value such that the desired electric current (collector-emitter current) between the collector and emitter can be extracted. This pre-configured supply voltage, commonly known as the bias voltage, will be applied as a reference for the transistor operation in the application circuit.In the RN1505(TE85L,F), the pre-biased array is particularly suitable for applications such as signal conditioning, signal amplification, switching, and voltage regulation, where the available supply voltage must be controlled with maximum efficiency. The array is also capable of providing superior switching speeds and improved response time, which can be useful in applications such as signal amplification, signal detection, and control systems.As compared to other types of transistors, the RN1505(TE85L,F)\'s pre-biased array offers a number of advantages. It requires less external components, as the bias voltage is already preset. This reduces board space, as well as manufacturing costs. Additionally, the pre-biased array provides improved performance characteristics such as decreased turn-on and turn-off times, and improved power efficiency.Furthermore, the availability of pre-biased transistors simplifies the assembly process and reduces the need of complicated electronics wiring. This enables easy and quick assembly of the device in the form of an integrated circuit, which is ideal for applications that require fast operation and quick response time.In conclusion, the RN1505(TE85L,F) array is a pre-biased type of transistor array that is suitable for a wide range of applications, including signal detection, signal amplification, switching, and voltage regulation. It features superior characteristics, including reduced turn-on and turn-off times, improved power efficiency, decreased external components, and easy assembly. This device is an ideal choice for applications where fast operation and improved performance are required.

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