RN1508(TE85L,F) Discrete Semiconductor Products

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Transistors form the backbone of modern integrated circuit(IC) technology. Bipolar junction transistors are one type of transistor, also referred to as BJTs, that are especially popular in many applications. The RN1508 (TE85L,F) is an example of an array of BJTs in a pre-biased configuration. This article will discuss the application field and working principle of the RN1508 (TE85L,F).

The RN1508 (TE85L,F) from ON Semiconductor is a quad pre-biased BJT array. It contains four transistors, each of which is pre-manufactured with a fixed base-emitter voltage of 6 V. This device was designed for linear and switching applications. It is used in applications that require a minimum on-state voltage drop, such as voltage control and current switch circuits. Additionally, the RN1508 (TE85L,F) is used in applications that require an extended input signal voltage range, such as LED dimming and LED light string applications. As such, the RN1508 (TE85L,F) has been widely adopted in automotive, household, and industrial lighting applications.

The RN1508 (TE85L,F) has a low quiescent current and is suitable for operation across a wide temperature range of -55 to 175 degrees Celsius. It is fabricated on a leadless chip carrier (LCC) package and is offered in both TSSOP and SOIC packages, making it an ideal choice for space-constrained applications. The RN1508 (TE85L,F) is also able to withstand an input voltage up to 30 V and can provide a maximum Pulsed Collector Current of 0.5 A. The high input impedance and low output impedance of the RN1508 (TE85L,F) allows for a wide range of applications that require a good signal to noise ratio and low EMI.

The working principle of the RN1508 (TE85L,F) is based on the transistor action. The RN1508 (TE85L,F) is composed of four transistors, each of which has a base, emitter and collector. The base and emitter are connected to the external power supply to form the forward bias part of the transistor. The collector is connected to the external load, such as a resistor. When the base voltage is applied, current flows from the base to the emitter. The amount of current is determined by the base-emitter voltage. This current prompted the flow of electrons from the base to the collector, and this movement of electrons from base to collector is the action of the transistor.

The RN1508 (TE85L,F) is a pre-biased transistor array, which means that it comes with a fixed base-emitter voltage. As such, it is able to provide a much higher current gain and a lower saturation voltage on the output than a non-biased device. Additionally, the fixed base-emitter voltage ensures that the device is able to switch on and off quickly, allowing for low-power operation. The RN1508 (TE85L,F) is often used in circuits that require high-speed switching or efficient current consumption.

In conclusion, the RN1508 (TE85L,F) is a pre-biased array of transistors from ON Semiconductor. This device is designed for applications that require a minimum on-state voltage drop, such as voltage control and current switch circuits, and can be used for LED dimming and light string applications. Additionally, it has a wide operating temperature range of -55 to 175 degrees Celsius and can provide a maximum Pulsed Collector Current of 0.5 A. The working principle of the RN1508 (TE85L,F) is based on the transistor action, with current flowing from the base to the emitter and electrons flowing from the base to the collector.

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