RN1509(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN1509(TE85LF)TR-ND |
Manufacturer Part#: |
RN1509(TE85L,F) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.3W SMV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1509(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
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Bipolar junction transistors (BJTs) are a type of electronic component that is often used in many electronic applications due to their versatility, reliability and cost effectiveness. In particular, pre-biased arrays offer a group of BJTs that are pre-biased to a particular current and they are used to amplify or switch electrical signals.
The RN1509 (TE85L,F) bipolar pre-biased array is an 8-pin, radially leaded array that is ideal for applications that require high voltage and low current BJT arrays. The RN1509 offers a range of great features that make it an attractive choice for use in many different electronics applications.
Application Field
The RN1509 is often used for instrumentation amplifiers and voltage levels-shifting operations. Additionally, it is suited to a wide range of different audio use cases such as preamplifiers, pick-up amplifiers, dynamic range control and many more. The RN1509 is best suited to high voltage, low current applications where the maximum voltage of the BJT array is between –20V and 200V and the current rating is between 0.2mA and 25mA.
Working Principle
The working principle of the RN1509 is quite simple and straightforward. It is essentially composed of a group of bipolar junction transistors (BJTs) which are pre-biased to a particular current. The array’s input current is either split between the base and collector or directed solely to the collector. The current then flows from the base to the collector and is amplified.
The signal can also be switched from the collector to the output pin, depending on the voltage at the signal inputs. This switching can be used for audio applications such as preamplifiers and signal processors. The RN1509 has very low power consumption, making it well suited for battery powered applications.
The RN1509 is capable of providing an impressive amount of power output for a relatively small package. Its versatility makes it a great choice for many different applications and its low cost ensures that it remains an attractive option.
The RN1509 provides a range of great features, making it an ideal choice when higher voltage and low current BJT arrays are required. The array is pre-biased to a particular current, allowing it to be used in a variety of applications. Furthermore, its switchability makes it highly versatile and its low power consumption ensures that it is suitable for use in battery powered devices.
The specific data is subject to PDF, and the above content is for reference
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