RN1507(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN1507(TE85LF)TR-ND |
Manufacturer Part#: |
RN1507(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.3W SMV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1507(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
Description
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Introduction to the RN1507(TE85L,F)
The RN1507 is a pre-biased array of four lateral NPN (Bipolar Junction Transistor, BJT) transistors, manufactured by the Brand ROHM. In order to meet the requirements of a broad range of applications and user needs such as consumer appliances and home electronic, the package of the device is SO-8 which is small and thin enough that can easily fit on even the tightest of spaces.Application Field of the RN1507(TE85L,F)
The RN1507(TE85L,F) is mainly used in oscillator circuits and driving circuits in consumer electronics and home appliance systems such as security and surveillance systems, electric power systems, and communications systems; when higher PNP current gains are needed for the noise, superior noise resistance, and wide temperature range are required to compensate for temperature change and disturbances, the RN1507 is usually the first choice.Besides, the RN1507 is also often included in voltage amplifiers, phase oscillators and pulse amplifiers or in other designs where voltage gains and higher PNP current gains are needed, they are used in applications such as remote control, TV and video equipment, audio equipment, digital logics, and process control, thanks to its lower power consumption and robust package. Finally, the four transistors of the RN1507(TE85L,F) provide better circuit protection, allowing for an increased system efficiency which results in increased reliability and lower costs.Working Principle of the RN1507(TE85L,F)
The RN1507(TE85L,F)is an array of four lateral NPN transistors, the four transistors of the device are arranged in series, with a common base, each transistor acts as an additional current gain, thus improving the overall efficiency and stability of the circuit.Specifically, the series combination of transistors reduces the interference generated by thermal resistance and maximizes the current gain and voltage switching gain. In addition, bias is applied to each of the transistors independently, thus allowing for greater efficiency, stability, and reliability.When operating, each transistor acts as an amplifier and the base current is then split among the four transistors, resulting in a higher overall current gain. The emitter current is also increased due to the increased gain of each transistor, thus increasing the total PNP current gain.Finally, thanks to the lower power consumption and robust package, the RN1507(TE85L,F) provides increased efficiency, stability and reliability.Conclusion
The RN1507(TE85L,F) is an pre-biased array of four lateral NPN transistors, manufactured by the Brand ROHM, which is specifically designed for applications where higher PNP current gains are needed, such as oscillator circuits and driving circuits in consumer electronics and home appliance systems. The device is a small and thin enough that can easily fit on even the tightest of spaces.The RN1507 provides increased efficiency, stability, and reliability thanks to the series combination of transistors which reduces the thermal resistance and maximizes the current and voltage switching gains.The specific data is subject to PDF, and the above content is for reference
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