Allicdata Part #: | RN2108MFVL3F-ND |
Manufacturer Part#: |
RN2108MFV,L3F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F VESM TRANSISTOR PD 150M |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2108MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01985 |
Series: | -- |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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RN2108MFV,L3F transistors are a type of single, pre-biased bipolar junction transistors (BJTs). A BJT is a type of electronic switch that works by controlling the amount of current flowing through two transistors or two diodes. It is capable of controlling both current (I) and voltage (V) in a circuit. This type of transistor is commonly used for voltage-sensitive applications such as audio amplifiers, voltage regulators, light dimmers, and audio signal lights.
RN2108MFV,L3F transistors are designed to provide a wide range of voltage control functionalities in a single, packaged device. They feature an optimized junction design to eliminate parasitic base-emitter capacitance, reducing the noise in the circuit and providing better control of the output voltage. Additionally, they are packaged in an industry-standard Quad flat no-lead (QFN) package, providing better thermal dissipation and increased space savings in the printed circuit board (PCB).
RN2108MFV,L3F transistors are commonly used in applications requiring pre-biased operation. Pre-biased transistors are those that are initially biased to a specific operating point. This allows them to remain stable and offer predictable performance at a wide range of voltage levels. One of the main benefits of using this type of transistor is its ability to operate accurately at high frequencies, making it ideal for high-speed applications such as digital communication systems and motor drives. Additionally, this type of transistor can be used in either an AC-coupled or DC-coupled configuration, allowing it to be used in any application requiring either high frequency or low frequency operation.
One of the main principles at work in the RN2108MFV,L3F transistor is bipolar switching. This is a process whereby two transistors (or diodes) are used to control the amount of current passing through a circuit by turning the flow of the current on or off. This is done by using the two transistors or diodes to create a voltage-controlled current source. As the voltage across the two transistors or diodes increases, the current flow will decrease, and as the voltage across them decreases, the current flow will increase. This type of switching is used in many circuits to control the output voltage or current by varying the amount of current passing through the circuit.
RN2108MFV,L3F transistors can be found in a variety of applications, such as audio amplifiers, voltage regulators, light dimmers, and audio signal lights. They are also well-suited for use in high-speed applications, as well as AC-coupled or DC-coupled configurations. Their pre-biased character makes them well-suited for use in circuits that require both high frequency and low frequency operation. Additionally, their optimized junction design provides improved control of the output voltage, reducing noise and improving circuit efficiency.
The specific data is subject to PDF, and the above content is for reference
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