Allicdata Part #: | RN2101LF(CTTR-ND |
Manufacturer Part#: |
RN2101,LF(CT |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2101,LF(CT Datasheet/PDF |
Quantity: | 6000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02282 |
6000 +: | $ 0.01985 |
15000 +: | $ 0.01687 |
30000 +: | $ 0.01588 |
75000 +: | $ 0.01489 |
150000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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RN2101,LF is a transistor specifically designed for pre-biased applications. It is part of the family of single, pre-biased transistors from STMicroelectronics and is popularly used for current sensing or switch-mode power applications. The transistor has a maximum input bias current of about 760mA and a desirable low switch-on voltage (VSO) of around 0.8 volts, making it ideal for operation at a wide range of forward bias voltages. It also has a low junction capacitance, making it suitable for high-speed signal processing applications.
The transistor requires a current limiting resistor in order to set the current, thus setting the output voltage. When applying a bias voltage, the transistor will draw an increase in current from the resistor and output an increase in voltage. The output voltage is limited by the resistor and therefore the transistor. By altering the resistor values, an even greater range of voltage Vs. current regulation can be obtained.
In order to optimize the efficiency of RN2101,LF, it is important to consider the following criteria: Rise Time (VRS), Fall Time (VFS), Peak Current (IPK) etc. VRS and VFS are important parameters to monitor while using this transistor as they can cause distortion of the signal. IPK is another important parameter to consider in pre-bias applications as it limits the maximum current bias. The IPK should be set according to the application requirement as a lower peak current might lead to slower frequency response.
The symmetry of the transistor is also an important parameter to consider in pre-bias applications, as it determines the evenness of the output current. Symmetrical transistors are preferred for this type of application as they can deliver an even amount of current in both the positive and negative direction. The use of an inverted current mirror can optimize the symmetry of RN2101,LF, thus delivering a more stable output.
In addition to these performance criteria, STMicroelectronics has also implemented features in the transistor to enhance its overall operation, such as tailored Input Offset Voltage correction, low thermal resistance and high breakdown voltage. All these features make the transistor an ideal choice for accurate current-sensing and switch-mode power applications.
Overall, RN2101,LF is a highly reliable and cost-effective transistor that can be used in a variety of applications. Its low input bias current, low switch-on voltage and symmetrical layout make it suitable for low-power designs. It is a great solution for pre-biased applications and can also be used in other areas such as circuit design, power sequencing and current control.
The specific data is subject to PDF, and the above content is for reference
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