RN2110,LF(CB

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The RN2110 LF Single Pre-Biased Transistor is a high performance NPN device specially designed for CB applications. It is manufactured with high-speed process technology and is an ideal replacement device for discrete systems. This versatile device can be used in a variety of applications where high speed, linear response and low power dissipation are desired.

The RN2110 is an NPN transistor specially designed for CB applications. It featured with a low flexibility hfe of up to 500 and a max collector current of 190mA. Its collector-emitter voltage (-Vceo) is about 30V at a collector current of 10mA. In addition, the device’s high-frequency and high-current characteristics along with its relatively low collector saturation voltage of -Vce(sat) make it an ideal choice for CB applications.

Moreover, the RN2110 is extremely power efficient and dissipates only 1.6 W at maximum rated power. This makes it ideal for low power applications such as portable CB radios and other consumer devices. The device also has a very high quality (Q) and low noise figure of 0.5 dB (typical). Thanks to its low noise figure and high-frequency characteristics, it can be used in high-gain and low-noise audio circuits.

The RN2110 is a single pre-biased transistor and as such it needs no external biasing. It is optimized for applications where the collector voltage must be maintained constant. This allows the device to be used in circuits requiring high frequency transients and fast pulse response. Additionally, the RN2110’s pre-biased characteristics basically eliminate the need for many tuning adjustments.

The device features a frequency range of up to 1GHz and can operate at frequencies as low as 20MHz. This makes it an excellent choice for applications such as TV reception, satellite communication, and other communications circuits. Its excellent hfe and low collector-emitter voltage drop also make it an ideal choice for low Vceo bias conditions.

The RN2110 is also designed for ease of use. It has a built-in noise reduction circuit and an ESD protection circuit for added reliability and device longevity. Its simple power connections via its standard TO-220 package make it an easy fit for almost any PCB layout. The device’s compatibility with standard 0.25-SPF land patterns further simplify the PCB assembly process.

The RN2110 is the ideal device for CB applications and other high-frequency circuits. With its robust build, low power consumption, ease of use and high performance, it is an excellent choice for any circuit design. The RN2110 LF single pre-biased transistor is a highly reliable and high-performance device with an outstanding feature set. It is the best choice for applications where precision and performance are key.

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