Allicdata Part #: | RN2107LF(CBTR-ND |
Manufacturer Part#: |
RN2107,LF(CB |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 50V 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2107,LF(CB Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02282 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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RN2107,LF(CB application field and working principle) is a type of single, pre-biased transistor, also known as a bipolar junction transistor (BJT). This transister is typically used in applications where precise voltage modulation or pulse frequency control is necessary, such as in the operation of voltage-controlled oscillators (VCOs), radio frequency (RF) amplifiers, and active filter circuits.
A single, pre-biased transistor is a three-terminal device, consisting of a base, collector, and emitter. The base terminal is used to control the amount of current flowing between the collector and emitter. When no voltage is applied to the base terminal, the transistor is in its OFF state. When voltage is applied to the base, a small current begins flowing between the collector and emitter, turning the transistor on and allowing current to pass between the collector and emitter.
In the RN2107,LF(CB application field and working principle), the base terminal is pre-biased by an externally applied voltage. This applies a fixed voltage to the base, allowing current to flow when a specific level of voltage is reached. This technique is used in applications such as current-controlled amplifiers and voltage-controlled oscillators.
The RN2107,LF(CB application field and working principle) is a robust, reliable, and high-performance transistor. It is capable of producing very high gains with low power consumption, making it ideal for use in high frequency applications. The device is supplied in the TO-263 package, which offers excellent power dissipation and thermal management capabilities.
In conclusion, the RN2107,LF(CB application field and working principle) is a single, pre-biased transistor, commonly used in a range of applications requiring precise voltage modulation or pulse frequency control. It offers high performance, low power consumption, and excellent power dissipation and thermal management.
The specific data is subject to PDF, and the above content is for reference
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