RN2109MFV,L3F Allicdata Electronics
Allicdata Part #:

RN2109MFVL3F-ND

Manufacturer Part#:

RN2109MFV,L3F

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F VESM TRANSISTOR PD 150M
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2109MFV,L3F datasheetRN2109MFV,L3F Datasheet/PDF
Quantity: 1000
8000 +: $ 0.01826
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM
Description

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A RN2109MFV,L3F bipolar junction transistor is a versatile electronic component with an array of uses in the applications. Bipolar transistors (or BJT) are the most common type of transistors and are used for small-signal amplifying or switching applications. This particular BJT is pre-biased and it is commonly used to create a wide range of electrical signals, such as radios, amplifiers, and timers.

This RN2109MFV,L3F is a NPN type transistor, meaning it\'s composed of a N-type semiconductor between two P-type materials, allowing it to control and amplify electrical signals. The base region is heavily doped which provides a high current concentration, and the emitters are connected to each other through a voltage source. The emitter is typically the emitter of a signal, and the collector collects the current from the base region and transfers it to the collector.

Working principle of a RN2109MFV,L3F is based on the fact that the base-emitter junction is back biasing. This means that a voltage applied to the base-emitter junction will cause the transistor to conduct current between the collector and emitter. When the voltage applied to the base-emitter junction is increased, more current flows from the collector to the emitter, and vice versa, which is how a BJT amplifies the electrical signal.

This NPN BJT is a popular choice for a variety of applications such as audio amplifiers, digital switches, instrumentation amplifiers, current multiplier circuits and level detectors. It is commonly used in consumer electronics such as TVs, radios, cell phones and microwave ovens. Additionally, it is used in automotive and industrial applications.

The RN2109MFV,L3F is a versatile single pre-biased BJT which can be used in a wide number of applications. As the transistor is pre-biased, the components of the BJT are ready for use. Additionally, its versatility allows it to be used to create various electrical signals, from audio amplifiers to level detectors. Thanks to its NPN construction, the RN2109MFV,L3F can also be used for a variety of applications, from consumer to industrial.

The specific data is subject to PDF, and the above content is for reference

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