Allicdata Part #: | RN2109MFVL3F-ND |
Manufacturer Part#: |
RN2109MFV,L3F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F VESM TRANSISTOR PD 150M |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2109MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01826 |
Series: | -- |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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A RN2109MFV,L3F bipolar junction transistor is a versatile electronic component with an array of uses in the applications. Bipolar transistors (or BJT) are the most common type of transistors and are used for small-signal amplifying or switching applications. This particular BJT is pre-biased and it is commonly used to create a wide range of electrical signals, such as radios, amplifiers, and timers.
This RN2109MFV,L3F is a NPN type transistor, meaning it\'s composed of a N-type semiconductor between two P-type materials, allowing it to control and amplify electrical signals. The base region is heavily doped which provides a high current concentration, and the emitters are connected to each other through a voltage source. The emitter is typically the emitter of a signal, and the collector collects the current from the base region and transfers it to the collector.
Working principle of a RN2109MFV,L3F is based on the fact that the base-emitter junction is back biasing. This means that a voltage applied to the base-emitter junction will cause the transistor to conduct current between the collector and emitter. When the voltage applied to the base-emitter junction is increased, more current flows from the collector to the emitter, and vice versa, which is how a BJT amplifies the electrical signal.
This NPN BJT is a popular choice for a variety of applications such as audio amplifiers, digital switches, instrumentation amplifiers, current multiplier circuits and level detectors. It is commonly used in consumer electronics such as TVs, radios, cell phones and microwave ovens. Additionally, it is used in automotive and industrial applications.
The RN2109MFV,L3F is a versatile single pre-biased BJT which can be used in a wide number of applications. As the transistor is pre-biased, the components of the BJT are ready for use. Additionally, its versatility allows it to be used to create various electrical signals, from audio amplifiers to level detectors. Thanks to its NPN construction, the RN2109MFV,L3F can also be used for a variety of applications, from consumer to industrial.
The specific data is subject to PDF, and the above content is for reference
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