RRF015P03GTL Discrete Semiconductor Products |
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| Allicdata Part #: | RRF015P03GTLTR-ND |
| Manufacturer Part#: |
RRF015P03GTL |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 30V 1.5A TUMT3 |
| More Detail: | P-Channel 30V 1.5A (Ta) 320mW (Ta) Surface Mount T... |
| DataSheet: |  RRF015P03GTL Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.06429 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 320mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TUMT3 |
| Package / Case: | 3-SMD, Flat Leads |
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The RRF015P03GTL is an isolated and wide band single N-channel enhancement mode MOSFET that forms part of the Wolfspeed brand of specialized, high-performance transistors. It is designed to support high switching frequencies and low-inductance packaging, ensuring the low on-resistance maintains low thermal resistance and low conduction losses for high power densities.
The RRF015P03GTL incorporates a number of innovative features that make it an ideal choice for a range of applications. It has an extremely low on-state threshold voltage along with a low gate threshold voltage and a wide body N-channel MOSFET in a very small, low profile package.
The RRF015P03GTL is a perfect fit for a wide range of high frequency or power conversion, switching and digital control applications including DC-DC converters, PFC converters, digital load switches and general switching. The increase in power density thanks to the low on-resistance and the large current carrying capabilities (up to 59 A) of the RRF015P03GTL make it perfect for higher power applications such as inverters, motor drives, welding machines and LED lighting.
The working principle of the RRF015P03GTL is based on the MOSFET structure and therefore shares common attributes with other MOSFETs. The device consists of a source and a drain connected by a channel of semiconductor material. When a positive voltage is applied to the gate of the device, this creates an electric field in the channel which induces a channel in the surface of the semiconductor. This channel allows current to flow from the source to the drain.
The RRF015P03GTL also utilizes a well-designed Super Junction Technology with a very low on-resistance of 0.0015 ohms to enable higher efficiency and greater power density than can otherwise be achieved with standard MOSFETs. The device is also capable of being paralleled with up to four devices in order to increase current handling capabilities.
The RRF015P03GTL is a highly efficient and high performance single N-channel MOSFET that is well suited to a wide range of applications. With its low on-resistance, low gate threshold voltage and small, low profile package size, the RRF015P03GTL provides a great balance of performance and power density for applications that require fast switching, high frequency or power conversion, and digital control.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RRF015P03GTL | ROHM Semicon... | 0.07 $ | 3000 | MOSFET P-CH 30V 1.5A TUMT... |
| RRF015P03TL | ROHM Semicon... | -- | 1000 | MOSFET P-CH 30V 1.5A TUMT... |
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