RRF015P03TL Discrete Semiconductor Products |
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| Allicdata Part #: | RRF015P03TLTR-ND |
| Manufacturer Part#: |
RRF015P03TL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 30V 1.5A TUMT3 |
| More Detail: | P-Channel 30V 1.5A (Ta) 320mW (Ta) Surface Mount T... |
| DataSheet: |  RRF015P03TL Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 3-SMD, Flat Leads |
| Supplier Device Package: | TUMT3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 320mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The RRF015P03TL is a Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) from Rohm Semiconductor. This device is a single channel enhancement mode device that works by controlling the voltage applied to the Gate pin in order to control the conduction of current through the three terminals - Drain, Source, and Gate. This type of device is highly efficient due to its near perfect control of the current and its low power consumption.
The RRF015P03TL is typically used in power control and switching applications, as well as in systems that require high performance and low noise operation. It is most often used in automotive, HVAC, audio, battery charging, motor control, display, and LED lighting applications. This device has a wide operating temperature range between -40 °C and 150 °C and can handle up to a 15A of peak current and a 55V maximum drain-source voltage.
This MOSFET utilizes the metal-oxide semiconductor technology, which allows for a very precise control of current by adjusting the voltage applied to the Gate terminal. When the Gate voltage is applied and higher than the threshold voltage, the MOSFET is turned “on” and current starts flowing through the device from the Drain to the Source terminals. The amount of current is then regulated by the current driving the MOSFET, called the Gate-Source voltage. This ensures that the current remains in a precise range and at a relatively low power consumption level.
The RRF015P03TL is designed to be highly reliable, even over long periods of time, thanks to its wide operating temperature range and its high immunity to heat spikes. The device has good switching speed and its ability to efficiently handle large currents make it ideal for high-power applications. Its low power consumption is another great benefit, making it suitable for battery-powered systems.
Overall, the RRF015P03TL is a great choice for power control and switching applications, as well as for any system that needs high performance and low noise operation. Its wide operating temperature range, high reliability, and low power consumption make it a great choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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