RRH040P03TB1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	650mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.2nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	75 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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The RRH040P03TB1 is a type of single vertical Power MOSFET, which is designed to be used in a range of applications to great effect. It is able to handle a wide range of voltages and currents, making the RRH040P03TB1 a versatile option for any application.A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a specialized type of field-effect transistor (FET) that is designed for high-power applications. Generally, power MOSFETs are more robust than other type of transistors and are better able to handle voltage and current surges.The RRH040P03TB1 is a vertical power MOSFET, meaning it is constructed in a vertical manner so as to reduce the size of its mounting area. This helps to reduce the space required for the device, allowing the RRH040P03TB1 to be used in a number of applications where space is at a premium.The die of the RRH040P03TB1 is designed to be either a PDM or PMOS type, depending on the application. This is important, as the two variations have different attributes that can enhance or degrade the performance of the device, depending on the specific application.The maximum rating for the RRH040P03TB1 is 60V and 45A, making the device suitable for a range of automotive, industrial, and consumer applications. It has a small form factor, good ESD performance, and is able to handle a wide range of temperature extremes.The device is intended for use in designs requiring planar gate protection, with the device able to dissipate up to 60W of power. This is achieved through the use of three sub-micron layers of insulation around the drain lead and its junction, as well as the gate dielectric layer for added protection.The key benefits of the RRH040P03TB1 are its wide input voltage range, its small size, and the fact that it is a consumer-rated device. This allows it to be used in a variety of applications, from consumer electronics to automotive and industrial applications.The working principle of the RRH040P03TB1 is based on that of a conventional field-effect transistor. It uses an applied electric charge to alter the conductive properties of the transistor, allowing it to be used as a switch, amplifier, or even a voltage regulator.The RRH040P03TB1 can be used in a variety of applications such as DART (diesel and gasoline engines), power supply design, automotive, industrial, and consumer electronics applications. It can also be used in power converters and controllers, as well as any design application requiring an efficient and reliable solution.When properly implemented, the RRH040P03TB1 can offer a range of advantages. These include great power transfer efficiency, low EMI (electromagnetic interference) performance, low distortion and noise levels, and improved reliability.Overall, the RRH040P03TB1 is a highly effective device for use in a range of applications. Its small form factor, high-voltage and current ratings, and great performance make it an ideal choice for a wide range of design applications.

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