RRH050P03TB1 Discrete Semiconductor Products

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Introduction

The RRH050P03TB1 is a common-source N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by ROHM. This type of transistor is used to create an electrical connection between two points and is typically used in high-speed switching applications.
The RRH050P03TB1 MOSFET features an RDSon (drain-source on-state resistance) of 2.7ohms, a maximum drain current of 0.5A, and a maximum drain-source voltage (VDSS) of 30V. It is capable of delivering a maximum power dissipation of 3W, and it has a total gate charge (Qg) of 30nC. This device is suitable for use in a variety of applications, including power management, high-speed switching, and audio/video switching.

Application Field

The RRH050P03TB1 MOSFET is an ideal choice for a wide range of applications. In high-speed switching applications, the device can switch rapidly and consume low power consumption. Additionally, it is capable of providing excellent thermal efficiency, improving power density, and reducing the need for bulky cooling systems. It is suitable for use in power management devices, such as switching power supplies and voltage regulators, as well as in audio/video switching systems. The low on-state resistance makes it ideal for use in low-voltage, low-current applications and high-frequency switch-mode power supplies.

Working Principle

A MOSFET works by using an electrical field, generated between a gate electrode and the channel, to control the flow of current between the drain and the source. When a voltage is applied to the gate, a transistor is induced in the closely spaced channel, and the electrical field that is formed causes electrons to be attracted to the gate and repelled from the drain and source. This creates an electrical connection between the drain and source and allows current to flow. When the gate voltage is removed, the transistor is no longer present and the connection between the drain and source is broken. The strength of this connection is controlled through the magnitude of the voltage that is applied to the gate.

Conclusion

The RRH050P03TB1 MOSFET is an ideal choice for a variety of applications, including power management, high-speed switching, and audio/video switching. Its low on-state resistance, combined with its excellent thermal efficiency, makes it ideal for use in low voltage/low current applications and high-frequency switch-mode power supplies. The device works by using an electrical field to control the flow of current between the drain and source, and allows current to flow when a voltage is applied to the gate.

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