RRH100P03GZETB Discrete Semiconductor Products |
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Allicdata Part #: | RRH100P03GZETBTR-ND |
Manufacturer Part#: |
RRH100P03GZETB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 30V 10A SOP8 |
More Detail: | P-Channel 30V 10A (Ta) 650mW (Ta) Surface Mount 8-... |
DataSheet: | RRH100P03GZETB Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 12.6 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 650mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RRH100P03GZETB is a single field-effect transistor (FET) that is part of Renesas\' Super Junction MOSFET series of FETs. The device is a highly-efficient, general-purpose transistor, with low on-resistance, low parasitic capacitance and high current handling capabilities. Its wide operating temperature range makes it suitable for a variety of applications. It is suitable for various kinds of power management applications, including dc-to-dc converters, audio amplifiers, lighting, consumer electronics and motor control.
The RRH100P03GZETB is an n-channel depletion type MOSFET with a maximum drain-source voltage of 100V and a drain current of 100mA. It has a high input impedance and the Gate-Source voltage range is -3V to 12V. Its maximum allowable power dissipation is 2W, making it well suited for applications where power efficiency is essential. The device is packaged in a small, plastic SOT-23 package, making it an ideal choice for space-constrained applications. The operating temperature range of the RRH100P03GZETB is -55°C to 175°C.
The RRH100P03GZETB works by utilizing the electric field generated by a voltage applied between the gate and source of the FET. When the voltage applied between the gate and source (Vgs) is below a certain threshold, the FET is in its off state, and no current flows from the drain to source (Ids). The device is said to be non-conducting. As Vgs rises above the threshold voltage, the FET turns on, and Ids begins to flow. The higher the Vgs, the higher the current will flow through the device.
While the general operating principle of the RRH100P03GZETB is the same as any other MOSFET, its unique Super Junction profile gives it a number of advantages over traditional MOSFETs. Some of the most important benefits include a decreased on-resistance, a decreased reverse recovery charge, and lower parasitic capacitance. This makes it well suited for power management applications where efficiency and switching speed are important.
The RRH100P03GZETB is suitable for a wide range of applications, from dc-to-dc converters, to motor control, and from audio amplifiers to lighting. Its low on-resistance, high current handling capabilities, and wide operating temperature range make it an ideal choice for applications where high efficiency, excellent switching speeds, and reliable performance are required. In addition, its small packaging size makes it a great choice for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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