RRH100P03TB1 Discrete Semiconductor Products |
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| Allicdata Part #: | RRH100P03TB1TR-ND |
| Manufacturer Part#: |
RRH100P03TB1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 30V 10A SOP8 |
| More Detail: | P-Channel 30V 10A (Ta) 650mW (Ta) Surface Mount 8-... |
| DataSheet: |  RRH100P03TB1 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 12.6 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 650mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SOP |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RRH100P03TB1 is a N-Channel enhancement mode, power MOSFET with a high current capacity, low on-resistance and improved avalanche characteristics. This versatile and reliable device is suitable for a number of versatile applications.
The RRH100P03TB1 is a 100-volt device that is specially designed for high power and high current applications. It features ultra-low on-resistance and very high junc- tion capacitance. This makes it an ideal choice for high efficiency applications such as switching power, lighting control, motor control, audio power amplifiers, power switches, and automotive circuits.
The RRH100P03TB1 has an extremely low gate-threshold voltage, which reduces gate drive requirements and improves power savings for cost-sensitive applications. It also features a very low gate charge, which reduces switching losses and is beneficial for high frequency switching applications.
The RRH100P03TB1 is based on a vertical MOSFET technology which provides low on-resistance, low gate charge and low on-state gate leakage. This combination of characteristics makes the device very suitable for high power switching applications.
The RRH100P03TB1 is capable of operating as a high current switch that requires minimal power consumption. Its low drain-source on-resistance and high current handling capabilities make it ideal for use in power supply circuits and other switching applications. The device also has an improved avalanche capability, making it suitable for use in high voltage applications.
In terms of its working principle, the RRH100P03TB1 is based on the principle of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The device is composed of an insulated channel layer, which is capable of carrying current, between the source and drain. This current flow is controlled by the gate voltage, which is applied to the gate terminal of the device. When a positive voltage is applied to the gate terminal, electrons are forced into the channel, causing it to become conductive. The negative voltage applied to the gate terminal has the opposite effect - the electrons are forced away from the channel, making it non-conductive.
The RRH100P03TB1 has a very wide operating temperature range and is capable of handling high currents. This makes it a great choice for applications such as switching power supplies, motor control, audio power amplifiers, lighting control, and automotive circuits.
In conclusion, the RRH100P03TB1 is a highly reliable and efficient N-channel enhancement mode power MOSFET with low on-resistance and high current capacity. It is based on the principle of the MOSFET and is suitable for use in a wide variety of applications. It has an extended temperature range, low gate charge and improved avalanche capability, making it the ideal choice for high efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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