RS1B-E3/61T Discrete Semiconductor Products |
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Allicdata Part #: | RS1B-E3/61TGITR-ND |
Manufacturer Part#: |
RS1B-E3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | RS1B-E3/61T Datasheet/PDF |
Quantity: | 12600 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS1B |
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Overview
RS1B-E3/61T is a single-phase, bridge rectifier module, which is widely used in the modern electronic industry due its unique features and efficient performance. It features high breakdown voltage, low forward voltage drop, high surge current capability, low stored charge loss, and long-term reliability. With its robust design and advanced technology, RS1B-E3/61T is suitable for a variety of applications and environments.
Application Field
RS1B-E3/61T has a wide application range. It can be used in many kinds of electronic circuits, such as switching power supplies, solar cells, motor control systems, consumer electronics, as well as electronic circuit protection against transient overvoltage. Additionally, it can also be used in automotive electronics and telecommunications.
Working Principle
RS1B-E3/61T operates according to the diode bridge rectification principle. A diode bridge consists of four diodes connected in a closed loop. When an alternating current is applied from the input side, the current passes through two diodes in one direction and two diodes in the opposite direction. This allows a single-phase alternating current to be rectified into a unidirectional pulsating current.
RS1B-E3/61T is composed of four high-efficiency diodes, each with a rated voltage of 600V. It features an isolation voltage of 2500V and a maximum forward current of 25A. It is also able to withstand high transient voltages and peak currents, making it suitable for harsh environments.
Advantages
RS1B-E3/61T has several advantages over other similar devices. Its robust design provides excellent protection against short circuits, overvoltage, and transient current. Additionally, it has a low thermal resistance, which reduces power dissipation and helps to increase the lifetime of the device. Furthermore, its low stored charge loss allows more efficient current flow and makes it ideal for high power applications.
Conclusion
RS1B-E3/61T is an ideal choice for a variety of applications, ranging from switching power supplies to motor control systems. It features excellent diode bridge rectification, low thermal resistance, and a high surge current capability. Additionally, its low stored charge loss and robust design make it suitable for harsh environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RS1BB-13-F | Diodes Incor... | -- | 15000 | DIODE GEN PURP 100V 1A SM... |
RS1BL RVG | Taiwan Semic... | -- | 6000 | DIODE GEN PURP 100V 800MA... |
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RS1BTR | SMC Diode So... | 0.02 $ | 145000 | DIODE GEN PURP 100V 1A SM... |
RS1BFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 100V 800MA SOD12... |
RS1B-13-F | Diodes Incor... | -- | 305000 | DIODE GEN PURP 100V 1A SM... |
RS1B-E3/61T | Vishay Semic... | -- | 12600 | DIODE GEN PURP 100V 1A DO... |
RS1B M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BL R3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
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RS1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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