Allicdata Part #: | RS1BLRFG-ND |
Manufacturer Part#: |
RS1BL RFG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 800MA SUBSMA |
More Detail: | Diode Standard 100V 800mA Surface Mount Sub SMA |
DataSheet: | RS1BL RFG Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.03308 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Introduction
Diodes are the most fundamental electronics components and play an important role in many different applications. The RS1BL Rectifier Field-Effect Transistor (RFET) is a type of diode specifically designed for use in a range of applications that require efficient power conversion in relatively small packages. This article explores the design and working principles of the RS1BL RFET as well as its various applications.
Design and Working Principles
The RS1BL RFET is constructed in a single package, comprising a gap-junction P-I-N diode, two frontside backfronts, and two side-gates. The P-I-N diode is the main rectifying element and is responsible for the rectifying action of the device. The frontside backfronts consist of two sections (bottomside and top) and control the conduction of the diode by setting the bias voltage in the middle of the diode. The side-gates are used to control the transconductance of the device, i.e. the gain of the device, by controlling the current flowing through it.The RS1BL RFET has a low on-state resistance (RDS(on)), which allows for high efficiency power conversion. Additionally, it has a low reverse-recovery time (tRR) which helps reduce switching losses. When reverse biased, the diode exhibits low leakage currents, ensuring it can function in low voltage applications. Finally, in addition to its low on-state resistance and reverse-recovery time, the diode has a low gate-drain charge (Qg), helping to further reduce switching losses.
Applications
The RS1BL RFET is typically used in applications that require efficient power conversion in a small package. Due to its low on-state resistance, the diode is often used in power converters, such as buck and boost converters, which require high-efficiency in a small package. Additionally, due to its low reverse-recovery time, the device is suitable for high-frequency applications such as inverters and motor drives. Finally, due to its low gate-drain charge, the diode can be used in high-speed switching circuits where the switching losses are critical.
Conclusion
The RS1BL RFET is a type of diode specifically designed for use in a range of applications that require efficient power conversion in relatively small packages. It has a low on-state resistance and reverse-recovery time for improved power conversion efficiency and a low gate-drain charge to reduce switching losses. The device is commonly used in power converters, inverters, and motor drives as well as in high-speed switching circuits. Therefore, it is an important component in many electronic systems.
The specific data is subject to PDF, and the above content is for reference
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