Allicdata Part #: | RS1BHE3/5AT-ND |
Manufacturer Part#: |
RS1BHE3/5AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | RS1BHE3/5AT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | RS1B |
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Diodes are semiconductor devices made up of two electrodes; an anode and a cathode. A single diode rectifier is a device used to convert an AC signal into a DC signal. RS1BHE3/5AT is a type of single diode rectifier with a large current rating and a wide operating temperature range. It is capable of handling up to 20A of continuous current and up to 3A of surge current.
The RS1BHE3/5AT is designed specifically for applications that require high efficiency, fast switching times, and rugged operation. It has a peak forward voltage of 1.7V and reverse voltage of 10V. It is also capable of handling temperature ranges from -50°C to +125°C, which makes it ideal for applications in extreme environmental conditions. Additionally, its small package size makes it suitable for use in space-sensitive applications.
The diode is composed of two elements, a P-Type semiconductor and an N-Type semiconductor. The P-Type is the anode, which is the positive side, and the N-Type is the cathode, which is the negative side. During its forward biased state, the P-Type allows electrons to move from the anode to the cathode, while in its reversed biased state, the N-Type prevents current flow in the opposite direction. When an alternating current is applied to the RS1BHE3/5AT diode, its forward biased section allows the positive half of the cycle to pass while the reversed biased section blocks the negative half.
This results in a rectified or converted DC signal that can be used in applications such as power supplies, motor controllers, and voltage regulators. The rectified signal also has a much lower ripple value than the original AC signal. This allows for more precise and precise control of voltage and current, as well as safer operations.
The RS1BHE3/5AT is a cost effective and reliable single diode rectifier that provides a considerable amount of power in a small package size. It is widely used in a variety of applications due to its high efficiency, fast switching times, and rugged operations. With its wide operating temperature range and high current rating, it is an excellent choice for applications such as power supplies, motor controllers, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RS1BFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 100V 800MA SOD12... |
RS1B-13-F | Diodes Incor... | -- | 305000 | DIODE GEN PURP 100V 1A SM... |
RS1B-E3/61T | Vishay Semic... | -- | 12600 | DIODE GEN PURP 100V 1A DO... |
RS1B M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BL R3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1B-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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RS1B-E3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BHE3_A/H | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BHE3_A/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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