
Allicdata Part #: | RS1BLHMHG-ND |
Manufacturer Part#: |
RS1BLHMHG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 800MA SUBSMA |
More Detail: | Diode Standard 100V 800mA Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.03093 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 800mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A RS1BLHMHG (Single Rectifier Diode) is a type of diode that is specifically designed for rectifying alternating current into direct current. It is an efficient and low-power electronic component that is used in many applications in the power industry. The RS1BLHMHG is a single phase rectifier diode that can be used in applications where space is limited. It is nature\'s way of keeping out AC-compatible circuits from interfering with DC-compatible circuits.The main field of application for the RS1BLHMHG is rectification in power supplies, electrical grids, and communication systems. It is well suited for applications where large power inputs are required. It can be used in wind power and solar power systems, as well as in motor control and battery charging. It is often used in low frequency power rectifiers and public railway systems.The RS1BLHMHG has a working principle that is based on the \'electron-hole\' effect. This type of rectifier diode uses a layer of two semiconductor materials that connect an anode to a cathode. The current passes through the junction by electric field emission of electrons in the anode material into the hole current in the cathode. An additional electric field is formed to reduce the forward voltage drop, making it possible for the diode to reduce the amount of energy needed in the rectification process.The RS1BLHMHG also has a low forward voltage drop, making it an effective lightweight power source. Its low forward voltage drop also reduces power consumption and increases efficiency. As a single rectifier diode, the RS1BLHMHG is also cost effective and can be used in a wide range of applications. The diode has a high temperature coefficient, which simplifies its usage in large power systems.In conclusion, the RS1BLHMHG is an effectiverectifier diode solution for applications where maximum efficiency and reliability is needed. Its single-phase design, low forward voltage drop, and high temperature coefficient make it an attractive option for power supplies, electrical grids, and communication systems.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1BL RHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1B/11 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BL MHG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL MQG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RUG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BTR | SMC Diode So... | 0.02 $ | 145000 | DIODE GEN PURP 100V 1A SM... |
RS1BHE3_A/H | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BLHRHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1B-E3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BB-13-F | Diodes Incor... | -- | 15000 | DIODE GEN PURP 100V 1A SM... |
RS1BLHRFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1B | ON Semicondu... | 0.05 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
RS1BHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BLHMTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHMHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL RVG | Taiwan Semic... | -- | 6000 | DIODE GEN PURP 100V 800MA... |
RS1B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A SM... |
RS1BHE3_A/I | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BL MTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BB-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A SM... |
RS1BL RTG | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1B-E3/61T | Vishay Semic... | -- | 12600 | DIODE GEN PURP 100V 1A DO... |
RS1B R3G | Taiwan Semic... | 0.04 $ | 9000 | DIODE GEN PURP 100V 1A DO... |
RS1BL R3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BLHRVG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BL M2G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1B-M3/61T | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RS1BHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1BFA | ON Semicondu... | 0.06 $ | 1000 | DIODE GP 100V 800MA SOD12... |
RS1B M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BLHRTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1B-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RS1BLHR3G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
RS1B-13-F | Diodes Incor... | -- | 305000 | DIODE GEN PURP 100V 1A SM... |
RS1BLHM2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 100V 800MA... |
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