RSD045P05TL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RSD045P05TL Application Field and Working Principle

RSD045P05TL is a N-Channel enhancement type MOSFET, with a maximum drain source voltage rated at 40V and a maximum drain current rating of 4.5 A. It has a relatively low ON resistance of 0.045 Ohms and with an RDS(on) of 0.02 Ohms, it is an excellent choice for high speed switching applications. It is also contained in a PowerPAK package, which is designed to reduce thermal resistance between the device and PCB surface, making it an ideal choice for power supply applications.

Application Field

RSD045P05TL is suitable for a variety of powering applications, due to it’s relatively low ON resistance and high current ratings. It is well suited for DC-DC converters, motor control, and high current switching applications. It is also used for a range of other power control designs including power supplies, desktop power supplies, UPS power supplies, Lighting and Automation control modules, EPS systems, and other micropower switching applications.

Working Principle

The RSD045P05TL consists of a source, gate and drain, just like all enhancement-type MOSFETs. The device is constructed of an N-channel in the datasheet direction, with the source being the most negative portion of the device, and the drain being the most positive portion. As the current is applied to the gate, the MOSFET is turned ON, and a conducting path is created between the source and the drain. The ON resistance is designated by the RDS(on) rating, which is typically given in the datasheet. The drain current rating indicates the maximum conducting current the MOSFET can handle, which is the maximum current level up to which the device will remain in saturation. The device has a maximum drain source voltage rating that can be seen in the datasheet, which indicates the maximum voltage the device can operate at.

When the MOSFET is turned OFF, the drain current corresponding to the given bias is equal to zero and the MOSFET is no longer in a conductive state. To eliminate any leakage, the gate voltage needs to be brought to the same potential as the source. This will turn off the device, preventing any drain current from flowing.

Conclusion

The RSD045P05TL is an excellent choice for the various powering applications due to its low ON resistance and high current ratings. Its application fields such as DC-DC converters, motor control and high current switching applications can benefit from its desirable features. Its working principle explains how the MOSFET can turn ON and OFF through the help of the gate, source and drain.

The specific data is subject to PDF, and the above content is for reference