RSD050N06TL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	CPT3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	15W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	290pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	109 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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RSD050N06TL is an standard product P-Channel enhancement mode power field-effect transistor. It is designed for use in low voltage application and power switch with low power consumption without the need for the additional power controller. RSD050N06TL offer low on-state resistance while providing full fast switching of power. It is suitable for switching ON/OFF of small loads used in applications including solenoid, compliance of lamp, voltage regulator, motor control, etc. Application fieldRSD050N06TL is suitable for high frequency switching with low total gate charge and RDS(on) for low voltage level shift and level translators, etc. It is mainly used in consumer and automotive applications, as well as smart phones, notebooks, monitors and projectors, etc. It is suitable for DC/DC converters, load switches, polarity reversal protection and gate driver circuits, etc.Working PrincipleRSD050N06TL is a P-Channel enhancement mode power field-effect transistor. It features low drain-source ON resistance (RDS(ON)). Its gate can turn it on or off by simply controlling its voltage. When the gate voltage is 0V, the transistor is in the off-state. However, when it is driven with a logic signal, it turns on, ultimately connecting the drain and source and allowing the current to flow. When the applied voltage reaches its threshold voltage, the transistor begins conducting. This threshold voltage is known as the transistor\'s “Turn-On” or “Turn-off” voltage. RSD050N06TL has a low capacitance which ensures that it can handle faster switching times. It also has a low on-resistance which ensures lower power loss and higher efficiency. Additionally, it has a low thermal resistance, allowing for optimal cooling and longer operational life. It also has a small, packages with low mounting height, and can be mounted directly onto the circuit board.In addition, RSD050N06TL can be used with ECUs for automotive and industrial applications, ASICs and FPGAs, Controllers and microprocessors, etc. It can also be used in Li-ion battery management, digital power supplies, GPS navigation systems, DC motors, digital power GRID and solar energy systems, and other smart devices.Finally, RSD050N06TL also has a high input impedance, making it an ideal device for a variety of primary and secondary designs. It offers both low on-resistance and a low capacitance, making it suitable for both audio and logic applications. It has a high reverse transfer capabilities, making it ideal for integrated gate drivers. It also has fast switching times, which allows for improved power efficiency, and eliminates the need for additional power controllers.In summary, RSD050N06TL is a P-Channel enhancement mode power field-effect transistor, suitable for high frequency switching with low total gate charge and low on-resistance. It is used in a wide range of consumer and industrial applications requiring small, low-power-consumption power switches and controllers. It is designed for use with ECUs for automotive and industrial applications, ASICs and FPGAs, Controllers and microprocessors, Li-ion battery management, digital power supplies, DC motors, digital power GRID and solar energy systems, and other smart devices. Additionally, it features low switching times, low thermal resistance, high input impedance, high reverse transfer capabilities, and low capacitance.

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