RSF010P03TL Allicdata Electronics
Allicdata Part #:

RSF010P03TLTR-ND

Manufacturer Part#:

RSF010P03TL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 1A TUMT3
More Detail: P-Channel 30V 1A (Ta) 800mW (Ta) Surface Mount TUM...
DataSheet: RSF010P03TL datasheetRSF010P03TL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: TUMT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RSF010P03TL is a power MOSFET utilized in an incredibly wide range of applications. It is a single N-channel enhancement mode MOSFET that is created with advanced low resistive and low capacitive silicon gate. It is built with the latest technology to allow for the most reliable, robust switches. Because of its unique structure, it can be utilized in a multitude of applications including power management, power synchronized control and medical power applications. The RSF010P03TL is well suited for use in applications where the the power MOSFET must be able to handle high current or power applications without failure.

Some of the features of the RSF010P03TL are as follows. It has a total gate charge of 24 nC, an Rds(on) of 350 mOhm, an on-state resistance of 450 mOhm, a total power dissipation of 125W, an operation voltage of 25V, and an operation temperature that ranges from -55 to +150 degrees Celsius. It is available in a TO-220F-8 package and is utilized with a gate-source voltage of +/-20V. This makes it ideal for a variety of requirements and temperature-based conditions.

The working principle of a MOSFET such as the RSF010P03TL is relatively simple. It is essentially two electrodes of opposite charges, one positive and one negative, which are connected to a semiconductor body. These two electrodes are the gate and the source. When a voltage is applied to the gate, it creates an electric field which modulates, or changes, the resistance of the body between the source and the drain. When the voltage is increased, the resistance decreases, and when the voltage is decreased, the resistance increases. This modulation of the resistance is known as “on/off”, as it allows for precise control of the current that can flow through the device.

The applications of the RSF010P03TL are often related to fields such as power management, motor control, and switching applications. In power management, the MOSFET is utilized to help regulate the supply of current to the system. This can help reduce the total amount of wasted power by reducing the total amount of current that is drawn while the system is inactive. In motor control, the MOSFET is used to create pulses to control the speed and torque of the motor, as well as its direction. In switching applications, the MOSFET is utilized to isolate the two parts of the circuit and control the current being drawn.

The RSF010P03TL MOSFET is a great device for a variety of applications and its features make it ideal for use in general power management, motor control, and switching applications. With its low resistive and low capacitive silicon gate, the MOSFET is built to provide the most reliable, robust switches. The MOSFET is available in a TO-220F-8 package, and it is able to handle a wide range of current and power applications with its total gate charge of 24 nC and its on-state resistance of 450 mOhm. It also has an operation temperature range of -55 to +150 degrees Celsius and a total power dissipation of 125W, making it suitable for a variety of requirements and temperature-based conditions. With its multitude of features and ability to simultaneously handle a variety of conditions, the RSF010P03TL makes for a great MOSFET in many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RSF0" Included word is 5
Part Number Manufacturer Price Quantity Description
RSF015N06FRATL ROHM Semicon... 0.08 $ 1000 NCH 60V 1.5A POWER MOSFET...
RSF015N06TL ROHM Semicon... 0.08 $ 1000 MOSFET N-CH 60V 1.5A TUMT...
RSF010P05TL ROHM Semicon... -- 1000 MOSFET P-CH 45V 1A TUMT3P...
RSF014N03TL ROHM Semicon... 0.15 $ 1000 MOSFET N-CH 30V 1.4A TUMT...
RSF010P03TL ROHM Semicon... -- 1000 MOSFET P-CH 30V 1A TUMT3P...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics