
Allicdata Part #: | RSF015N06TL-ND |
Manufacturer Part#: |
RSF015N06TL |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 1.5A TUMT3 |
More Detail: | N-Channel 60V 1.5A (Ta) 800mW (Ta) Surface Mount T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.08000 |
10 +: | $ 0.07760 |
100 +: | $ 0.07600 |
1000 +: | $ 0.07440 |
10000 +: | $ 0.07200 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | TUMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 10V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RSF015N06TL is a high-voltage and high-current N-Channel Field-Effect Transistor (FET), commonly known as a MOSFET, which is designed and manufactured to operate in a variety of applications. The device has a low drain-source on-resistance of 0.015Ω, a breakdown voltage of 60V, and a maximum continuous drain current of 57A.
This MOSFET is well-suited for high voltage and high current applications such as switch-mode power supplies (SMPS), motor control, DC-DC converters, and battery chargers, where it can handle large currents and voltages. It is also suitable for use in class-D amplifiers, which require high voltage FETs with a low on-resistance and capacitive loads.
The working principle of the MOSFET involves controlling the flow of electrons through a channel between the source and drain by modulating the voltage applied to the gate. When the voltage applied to the gate is increased, the channel will open, allowing electrons to flow from the source to the drain, thus creating a conducting path. Similarly, if the voltage applied to the gate is decreased, the channel will be closed and no current will flow. This is the basic principle behind how MOSFETs are used to control the flow of current in a circuit.
The RSF015N06TL MOSFET is specifically designed for applications that require a low drain-source on-resistance and high-current/voltage handling capability. The device is constructed using an advanced process technology featuring a proprietary trench structure, which results in a higher breakdown voltage and lower on-resistance. The device also includes a temperature-compensated oxide-gate drive which allows optimal performance over wide temperature ranges.
In conclusion, the RSF015N06TL MOSFET is an ideal choice for applications that require a high-voltage and high-current handling capability as well as a low drain-source on-resistance. The device is constructed with an advanced process technology featuring a proprietary trench structure, which provides excellent thermal stability, reliability, and capabilities. It is an ideal choice for applications such as SMPS, motor control, DC-DC converters, and class-D amplifiers.
The specific data is subject to PDF, and the above content is for reference
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