RSQ025P03TR Allicdata Electronics

RSQ025P03TR Discrete Semiconductor Products

Allicdata Part #:

RSQ025P03TR-ND

Manufacturer Part#:

RSQ025P03TR

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 30V 2.5A TSMT6
More Detail: P-Channel 30V 2.5A (Ta) 1.25W (Ta) Surface Mount T...
DataSheet: RSQ025P03TR datasheetRSQ025P03TR Datasheet/PDF
Quantity: 1000
1 +: $ 0.18000
10 +: $ 0.17460
100 +: $ 0.17100
1000 +: $ 0.16740
10000 +: $ 0.16200
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The RSQ025P03TR is a N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which belongs to Single FETs & MOSFETs family. MOSFETs are the type of transistors used in modern electronic equipment for power amplification. They are also known for their ability to operate as switches, and this is how the RSQ025P03TR is used in many applications.

Application Field of RSQ025P03TR

The RSQ025P03TR is extremely versatile and suitable for multiple applications. It is used primarily in small-signal, low power applications and is typically used as a switch for load switching, general purpose inverters, input / output (I/O) control and high frequency circuits. It is also popular in automotive electronics, home appliances and other consumer electronics, due to its low on-state resistance and high speed of switching.

The RSQ025P03TR is also used in wireless communications and cellular phones, as it is ideal for low-power amplification and switching applications. Its low input capacitance and low input bias current make it suitable for high frequency applications, such as pulse generators and digital logic circuits.

Working Principle of RSQ025P03TR

The RSQ025P03TR is a voltage-controlled device, which means that its current can be controlled by the applied voltage across its gate-source terminals. In other words, when a voltage is applied to the gate of the RSQ025P03TR, it will allow a controlled amount of current to flow through it, depending on the applied voltage. This is known as the ‘gate-source voltage’.

When the MOSFET is in the ‘ON’ state, a small voltage is applied to the gate, which causes the channel between the source and drain to be opened up. This allows the current to flow from the source to the drain. When the voltage applied to the gate is reduced, the channel between the source and drain is ‘closed’ and current will not flow. This is known as the ‘OFF’ state.

The RSQ025P03TR also has a high input impedance, which means that it requires very little current to operate and can work with very low voltages. This makes it well-suited for use in low-power, high-frequency applications. Typically, the input impedance of a RSQ025P03TR is between 100k and 500k ohms.

Conclusion

The RSQ025P03TR is an N-channel MOSFET which is used primarily in low power applications. It is used as a switch for load switching, general purpose inverters, input/output (I/O) control and high frequency circuits, and is popular in automotive electronics, home appliances and other consumer electronics. It is also used in wireless communications and cellular phones due to its low on-state resistance and high speed of switching. In order to operate, it requires very little current and can work at low voltages due to its high input impedance.

The specific data is subject to PDF, and the above content is for reference

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