RSQ035P03TR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSMT6 (SC-95)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.25W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	780pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.2nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	65 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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RSQ035P03TR Application Field and Working Principle

RSQ035P03TR is an analog MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed by ROHM Semiconductor and belongs to their “AP-FET” (Advanced Power Field Effect Transistor) series. These transistors are designed for use in high power applications and require less current for operation to conserve energy. With its high power capacity, high efficiency, low input voltage, and wide operating temperature range, the RSQ035P03TR is suitable as a power amplifier and switch in various industrial and consumer electronics. The RSQ035P03TR is composed of a single p-channel Power MOSFET integrated circuit, meaning that it uses a highly specialized type of transistor. This type of transistor has two distinct regions, an “on” region and an “off” region, and can be used as either a diode or as a switch, depending on the application. The MOSFET has a three-terminal design, with the two inputs being the “gate” and “source” terminals, and the output being the “drain” terminal. The gate is the part of the transistor responsible for controlling the flow of current, or “conductance”, and is usually connected to a positive voltage supply (VGS) to turn “on” the transistor. The source and drain terminals are the parts which determine the current flow, or “drain current”, in the off state and are usually connected to either a voltage source or current source.The RSQ035P03TR is manufactured using the optimized CoolMOS™ technology, which improves the transistor’s switching speed and reduces power dissipation, providing higher efficiency performance in power conversion and maximum current carrying capability. It also features an optimized structure to reduce the on-resistance and gate charge of the transistor, which improves the power efficiency and allows for higher current carrying capability.The main application fields of the RSQ035P03TR are in industrial and consumer electronics, such as automotive, audio amplifiers, power supplies, lightning, and industrial systems. It is a popular choice for high current DC-DC converters, power amplifiers, and other high power applications.To summarize, the RSQ035P03TR is a single p-channel, analog MOSFET developed by ROHM Semiconductor as part of their “AP-FET” series. It is designed for use in high power applications and features an optimized structure to reduce the gate charge of the transistor, providing higher efficiency performance in power conversion and maximum current carrying capability. The RSQ035P03TR is best suited for applications in industrial and consumer electronics, such as automotive, audio amplifiers, power supplies, and lightning systems.

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