RT1E040RPTR Discrete Semiconductor Products |
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Allicdata Part #: | RT1E040RPTR-ND |
Manufacturer Part#: |
RT1E040RPTR |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 30V 4A TSST8 |
More Detail: | P-Channel 30V 4A (Ta) 550mW (Ta) Surface Mount 8-T... |
DataSheet: | RT1E040RPTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10233 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-TSST |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 550mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RT1E040RPTR is a single channel low on-resistance power metal-oxide-semiconductor field-effect transistor (MOSFET). It is utilized for a variety of applications, such as power switching, motor control, and other power management applications. The RT1E040RPTR is commonly found in auto-switch power supplies, power converters, and other equipment.
The RT1E040RPTR is a high performance, low voltage Modular MOSFET. It offers low on-resistance, low gate charge, fast switching speed, and excellent thermal and current carrying capabilities. This makes it an ideal choice for a variety of applications where a power switching device is required.
The RT1E040RPTR has a single-channel, N-type enhancement mode MOSFET. It consists of a drain, gate, and source terminal. The gate terminal is used to control the drain-source current, which is proportional to the voltage applied between gate and source terminals. The high density cell array structure used in the RT1E040RPTR allows for vastly improved switching performance.
The gate-source threshold voltage of the RT1E040RPTR is −2.5 V and the drain-source breakdown voltage is −30 V. The on-resistance of the device is 40 mΩ and it can handle drain currents up to 4 A. The maximum junction temperature for the RT1E040RPTR is +150°C.
The working principle of the RT1E040RPTR is based on its application in power switching. The MOSFET has a gate terminal, which receives a digital control signal. This signal will turn on or off the drain-source current, depending on if the gate voltage is higher or lower than the threshold voltage. In other words, the current between the drain and the source can be controlled by the applied gate voltage.
The RT1E040RPTR is primarily used in power supplies, auto-switch power supplies, and other equipment where power switching is required. It is also an ideal choice for motor controllers and current limiters. Its low on-resistance offers improved performance, greater efficiency and increased power density.
The RT1E040RPTR is a high-performance Modular MOSFET, offering excellent performance for Power Switching, Motor Control, and other power management applications. It offers low on-resistance and low gate charge, allowing for fast switching, improved efficiency, and increased power density. The device is especially suitable for use in power supplies, auto-switch power supplies, motor controllers, and current limiters.
The specific data is subject to PDF, and the above content is for reference
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