RT1E050RPTR Discrete Semiconductor Products

The RT1E050RPTR is a single N-channel, Lateral Field Effect Transistor (FET). This device has an off-state max RDS(ON) of 0.050 ohms and an on-state max RDS(ON) of 0.45 ohms. RT1E050RPTRs are typically used in applications that require midrange RDS(ON) and a low gate-threshold voltage.The RT1E050RPTR is part of the RT1 series of FETs by Rohm Semiconductor. This series features a consistent footprint size among devices, allowing for a flexible design experience when developing a board. The RT1E050RPTR is one of the largest current density devices available in the RT1 series, which makes it ideal for applications where space is at a premium and high current density is a requirement.The RT1E050RPTR FET is a device that uses field effect technology to control the current flow between its source and drain electrodes. When a voltage is applied to the gate electrode, it influences the electric field generated at the channel area of the FET, creating a bulk inversion layer (the "channel"). This channel then allows the electrical current to flow through it, depending on the voltage applied to the gate. This means that the gate voltage can be used to control the FET\'s current flow, allowing the curve of the RDS(ON) to be adjusted according to the voltage applied to the gate.In addition to its use in a variety of electronic applications, the RT1E050RPTR FET can also be used in the manufacture of integrated circuits. This type of device is particularly well-suited for use in high-temperature processes, thanks to its high maximum junction temperature of 175°C. The device also has a low maximum gate charge, which helps minimize switching losses in power electronics applications.For applications that require low gate-threshold voltage and low RDS(ON), such as low voltage power supplies or battery-powered applications, the RT1E050RPTR FET is an excellent choice. Its small size, low gate charge, and low threshold voltage also make it ideal for uses where space is at a premium. Moreover, because it is a single channel FET, it is also well-suited for use in switch and power electronics applications.In summary, the RT1E050RPTR FET is an ideal device for applications that require midrange RDS(ON) and a low gate-threshold voltage. Its small size, low gate charge, and low threshold voltage make it particularly well-suited for use in high-temperature processes, low voltage power supplies, and battery-powered applications where space is at a premium.

RT1E050RPTR	ROHM Semicon...	0.11 $	1000	MOSFET P-CH 30V 5A TSST8P...
RT1E040RPTR	ROHM Semicon...	0.11 $	1000	MOSFET P-CH 30V 4A TSST8P...