RUC002N05HZGT116 Discrete Semiconductor Products

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The RUC002N05HZGT116 is a highly efficient and high performance NMOS Complementary Field Effect Transistor (FET) designed for medium voltage and current applications. The RUC002N05HZGT116 utilizes a low drain-source resistance (RDS(ON)) of 0.005-Ohm, increasing efficiency and reducing power loss. The device features a maximum junction temperature rating of 175°C, aiding the majority of medium voltage and power applications. The RUC002N05HZGT116 operates with an operating voltage of up to 10 Volts, which provides an effective temperature compensation range of up to 7 Volts, making the device suitable for high current applications.

The RUC002N05HZGT116 is designed for medium voltage and current applications such as home/office automation, industrial control, general purpose switching, and telecommunications. The device is suitable for applications where low power loss and high efficiency are essential, as well as applications in confined spaces. Additionally, the RUC002N05HZGT116 offers incidental protection against electrostatic discharge (ESD) due to its separate gate architecture.

The RUC002N05HZGT116 is a N-channel MOSFET which operates on the principle of a Schottky diode and in a single transistor configuration. Based on the design of the Schottky diode, the drain-source voltage (VDS) passes through a depletion region before it reaches the quasi-neutral region known as the flat band. This significantly reduces the power loss within the device. Furthermore, controlling the number of drain-source voltage cycles keeps the gate capacitance in balance, preventing any gate leakage current. The device features a gate resistance of 5-Ohms, reducing the possibility of high frequency operation.

The RUC002N05HZGT116 offers an impressive RDS(ON) figure of 0.005 Ohm, making the device well suited to low voltage, high current applications. The device also provides a maximum junction temperature of 175°C, allowing for a wide range of power handling requirements in both medium voltage and power related applications. Finally, the device offers excellent electrostatic discharge protection when compared to other single MOSFETs.

In conclusion, the RUC002N05HZGT116 is an excellent choice for medium voltage and current applications. The device offers an RDS(ON) figure of 0.005 Ohm, a maximum junction temperature rating of 175°C, and excellent electrostatic discharge protection. Furthermore, the device is suitable for applications in confined spaces, ensuring efficiency and power loss is kept at a minimum. All of these features combine to make the RUC002N05HZGT116 an ideal choice for a wide range of medium voltage and power related tasks.

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