RUC002N05T116 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 1mA
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	25pF @ 10V
FET Feature:	--
Power Dissipation (Max):	200mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SST3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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RUC002N05T116 is a single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that operates on a low-voltage gate-controlled single-lead and low-level current (the maximum switching current is 10A and a drain-source voltage is 60V).. It is a voltage-controlled field-effect transistor (VFET) knowing as an insulated gate FET (IGFET) and is widely used in many different applications.

Applications

One of the most common applications for RUC002N05T116 is switching and amplifying due to its high current carrying capacity and low voltage gate control. It has low input capacitance, making it suitable for noise-sensitive DC/DC converter control applications. It is also widely used in motor control, automotive switch applications, and switching power supplies.

Working Principle

RUC002N05T116 is based on the principle of the field-effect transistor (FET), which works by applying a voltage field on a thin layer of metal oxide semiconductor material in order to control the conductance of currents through the device. A low-level current is passed between the source and the drain using an insulated gate, which can be used to control the width of the insulating oxide layer. This allows the device to control the input and output currents by regulating the voltage field between the source and the drain.

Structure and Pinouts

RUC002N05T116 has a general-purpose three-terminal structure with three pins, as shown in the image below. The first pin is the drain, which is connected to the power supply and the load. The second pin is the insulated gate, which is connected to the controlling voltage. The third pin is the source, which is connected to the ground.

Benefits

RUC002N05T116 has several advantages over other FETs. It is low-cost due to its low voltage gate control and its small physical size, making it easier to use in space-constrained applications. It also has a low on-resistance and high current carrying capacity, making it efficient and reliable. Additionally, it is resistant to temperature and corrosion and is capable of handling high-voltage, high-current applications.

Conclusion

RUC002N05T116 is a reliable and cost-effective single MOSFET with high current and power handling capabilities. It has a low-voltage gate control and low input capacitance, making it suitable for DC/DC converter control applications, motor control, and automotive switch applications. Its small physical size and low-cost makes it an ideal choice for many applications.

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