| Allicdata Part #: | RUE002N05TL-ND |
| Manufacturer Part#: |
RUE002N05TL |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 50V 0.2A EMT3 |
| More Detail: | N-Channel 50V 200mA (Ta) 150mW (Ta) Surface Mount ... |
| DataSheet: |  RUE002N05TL Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.04637 |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | EMT3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 150mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 10V |
| Vgs (Max): | ±8V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 200mA, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The RUE002N05TL is one of the most common MOSFETs available in the market today. It is widely used for a variety of applications, including power and current control, switching, and voltage regulation. This article will discuss the application field and working principle of the RUE002N05TL.
The RUE002N05TL is a N-channel enhancement mode MOSFET commonly used in high performance power control and switching applications. It is a 5 Amp/50V part with a low on-state resistance of 0.002 ohms, making it ideal for power management applications. The RUE002N05TL is widely used in motor control, frequency modulation, CAN bus and switching power supplies.
The MOSFET or Metal-Oxide Semiconductor Field Effect Transistor is a three-terminal semiconductor device that acts as an electrical switch, and is capable of controlling large currents and voltages. The RUE002N05TL uses the enhancement mode type of MOSFET, which uses a negative voltage on the gate to turn the MOSFET on and a positive voltage on the gate to turn the MOSFET off. The working principle of the MOSFET is based on the creation of an inversion layer that is formed at the surface of the gate oxide when a voltage is applied to the gate.
The RUE002N05TL is a high performance MOSFET that is well-suited for a variety of power applications. It is easy to use, and its low on-state resistance makes it ideal for current control, switch control and voltage regulation. Furthermore, its stability and high energy efficiency make it an ideal choice for high performance applications.
In conclusion, the RUE002N05TL is one of the most commonly used MOSFETs in the market today. Its application field covers a wide range of power applications, such as motor control, frequency modulation, CAN bus and switching power supplies. Its working principle is based on the inversion layer that is formed at the surface of the gate oxide when a voltage is applied to the gate. Its low on-state resistance and high energy efficiency makes it ideal for high performance power applications.
The specific data is subject to PDF, and the above content is for reference
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