RUE003N02TL Discrete Semiconductor Products |
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Allicdata Part #: | RUE003N02TLTR-ND |
Manufacturer Part#: |
RUE003N02TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 20V 300MA EMT3 |
More Detail: | N-Channel 20V 300mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | RUE003N02TL Datasheet/PDF |
Quantity: | 15000 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 10V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 300mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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.The RUE003N02TL is a 600 V N-Channel enhancement mode vertical MOSFET. It is designed for applications such as switching and linear circuits, power supplies, battery chargers, inverters, motor control and interface circuits.
MOSFETs, also known as transistors, are three-terminal, solid state devices which control the flow of current in a circuit. They are made of two parts, an insulated gate and an intrinsic substrate. The gate controls an underlying channel in the substrate which is used to conduct current. As opposed to BJT transistors, MOSFETs are voltage-controlled devices, meaning the current flow is dependent on the gate-source voltage. This makes them highly efficient and better suited to low voltage and high frequency applications.
The RUE003N02TL has a breakdown voltage of 600 V, a drain-source voltage of 400 V, and a maximum drain current of 2.0 A. It offers low on-resistance and has a low input capacitance which makes it ideal for use in high speed switching and amplifier applications. The MOSFET also features a fast switching times, reverse bias protection, and wide temperature range of -55°C to +150°C.
One of the major benefits of MOSFET technology is high input impedance. This is because the voltage applied to the gate terminal is insulated from the current flowing in the substrate. As a result, MOSFETs do not require a lot of current to operate, making them ideal for low current applications. Additionally, MOSFETs have relatively low power dissipation and operate at a wide temperature range.
The RUE003N02TL is designed to operate in linear circuits, power supplies, battery chargers, inverters, and motor control and interface circuits. In linear circuits, it is used as a voltage-controlled resistor, allowing it to provide a linear resistance to the current flowing through the circuit. In power supplies and inverters, MOSFETs are used as a switch to control the flow of power from the input to the output of the circuit. In battery chargers and motor control circuits, MOSFETs are used to control the speed of the motor or to regulate the amount of current flowing through the circuit. In interface circuits, MOSFETs can be used to interface two sources, allowing them to interact with each other.
In summary, the RUE003N02TL is an N-Channel enhancement mode vertical MOSFET designed for applications such as switching and linear circuits, power supplies, battery chargers, inverters, motor control, and interface circuits. It has a high input impedance, low on-resistance, and a low input capacitance, making it ideal for high speed switching and amplifier applications. It also features a fast switching time and a wide temperature range of -55°C to +150°C.
The specific data is subject to PDF, and the above content is for reference
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