RUF015N02TL Discrete Semiconductor Products

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The RUF015N02TL is a single N-Channel Power MOSFET Transistor that is used in the vast majority of electronic devices in the current market. It is a type of Field Effect Transistor (FET) that is encased in a hermetically sealed dual inline package. The RUF015N02TL is widely seen as a reliable, efficient, and adaptable power transistor that can be used in a variety of applications.

Specifications

The RUF015N02TL has the following specifications:
· Maximum drain current: 15A
· Drain source voltage: 100V
· On-state resistance: 0.008ohm
· Turn-on delay time: 10µs
· Number of S-Terminals: 3
· Single gate package: 2-terminal
· Maximum gate-source voltage: 20V

Application Areas

The RUF015N02TL’s wide range of specifications and adaptability make it suitable for many applications. Some areas where it is frequently used include:

• Power converters and amplifiers
• Uninterrupted power supplies
• Industrial automation systems
• Computer and telecom systems
• Medical equipment
• Heating and air conditioning systems
• Consumer electronics

Working Principle

Field Effect Transistors, such as the RUF015N02TL, use electric fields to control the flow of current when a voltage is applied. This is denoted by the fourth letter of the RUF015N02TL’s part number: F, for Field Effect Transistor. The two of the device’s sources act as the drain and source of a MOSFET, and the third is the gate. When voltage is applied to the gate, a current begins to flow from the drain to the source and is unregulated until the gate voltage drops below the threshold voltage.

When the gate is below the threshold voltage, the current stops flowing, effectively turning the device off. In the RUF015N02TL, the gate is located in a hermetically sealed dual inline package, which provides additional protection against external interference.

Conclusion

The RUF015N02TL is a reliable, efficient, and adaptable MOSFET transistor that can be used in a variety of applications. It is capable of handling up to 15A of current with a maximum drain-source voltage of 100V and a low on-state resistance of 0.008ohm. The RUF015N02TL’s working principle is based on the electric fields created by applying a voltage to the gate, and it is protected from external interference with its hermetically sealed dual inline package.

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