RUF025N02FRATL Discrete Semiconductor Products

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The RUF025N02FRATL is a high speed N-Channel MOSFET with low gate threshhold voltage. This FET provides efficient operation and boosted performance for a wide range of applications. It is mainly used in the automotive, industrial, medical and consumer electronics industries, as well as for power supplies in the household appliances, telecommunications, and industrial markets.

This FET was designed to reduce power consumption and improve switch response times. It has an extended range of operating temperature from -55 to 175°C, making it suitable for use in high-temperature environments. RUF025N02FRATL also offers enhanced immunity against ESD as well as latch-up protection. It is usually used for secondary switching applications in power switching systems.

RUF025N02FRATL is built around the principle that when a certain voltage is applied to the gate, it switches on and the high power switch between drain and source is activated. This voltage is called the gate threshold voltage. This type of FET also accepts switching conditions which are more severe than regular power MOSFETs. With a low gate threshold voltage of only 2V, the FET can be switched on and off faster. This makes it suitable for high-speed switching applications such as in digital circuits.

The RUF025N02FRATL has a low 0.025 ohm on-state resistance that enables higher speeds and lower power losses than other conventional MOSFETs. With its capacity to handle currents of up to 2A, the FET is well suited to be used for switching and regulating power in, for example, automotive, industrial and medical electronics.

Although RUF025N02FRATL is usually used for low-voltage applications, it is capable of operating at higher voltages too. As compared to other similar FETs, it has a reverse leakage current of 1μA that allows it to achieve higher power efficiency. It also has a maximum source-drain voltage of 40V, making it suitable for some high-voltage circuits.

The RUF025N02FRATL has several distinct advantages over other similar FETs. It has high power transfer efficiency and low gate threshold voltage, making it a great choice for switching applications. Its ability to handle currents up to 2A, maximum dissipated power of 4W, and extended operating temperature range make it suitable for high-stress applications. Finally, its low reverse leakage current allows it to achieve higher power efficiency, giving it an even greater advantage over other FETs.

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