RUL035N02FRATR Discrete Semiconductor Products

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Introduction of RUL035N02FRATR

RUL035N02FRATR is a trench-gate field-effect transistor (FET) manufactured by Toshiba. It is a single n-channel Mosfet (metal oxide semiconductor field-effect transistor) with a rated drain current of 0.6 A and a rated drain voltage of 25 V. It has a very low ON resistance of 0.035 Ω and can handle a maximum power dissipation of 1.1 W.

Application Field

This device is suitable for general purpose applications, such as high-side or low-side switches and power supply circuits. It is frequently used in DC-DC converters, which are used to regulate the supply voltage to electronic circuits. It is also used in DC motors, power distributors, switch-mode power supplies, thyristor drivers, etc. It is especially suited for applications where low on-resistance and high current capability is needed.

Working Principle

The inner structure of a MOSFET consists of a source terminal, a drain terminal, a gate terminal and a substrate. The gate terminal is insulated from the substrate by a thin layer of silicon dioxide (SiO2). The gate terminal can be used to control the flow of electrons between the source and the drain. When a positive voltage is applied to the gate terminal, it attracts electrons from the source and releases them onto the drain, forming an electrical channel between the source and the drain. This causes current to flow from the source to the drain. By varying the gate voltage, the width of this channel can be changed, and thus the amount of current flowing between the source and the drain can be controlled.

When the MOSFET is used as a switch, it is often connected to a control circuit. This control circuit outputs a certain voltage to the gate and this voltage will determine whether or not current will flow in the circuit. This method of controlling current flow is used in many different types of applications, such as variable power supplies, motor speed controllers, and so on.

RUL035N02FRATR is a low on-resistance device and is thus ideal for applications where high current and low voltage drops are required. The device is also very tolerant of switching transients and is thus suitable for automotive applications.

Conclusion

RUL035N02FRATR is an n-channel MOSFET transistor manufactured by Toshiba. It has a low on-resistance and can handle a maximum power dissipation of 1.1 W. It is suitable for general purpose applications, such as high-side or low-side switches and power supply circuits, as well as DC-DC converters and DC motors. It is especially suited for applications where low on-resistance and high current capability is needed. The device works on the principle of controlling the flow of electrons between the source and the drain by varying the gate voltage.

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